Datasheet > AS197-306

AS197-306

更新时间： 2024-11-06 23:31:19

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AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S\|DC-6 GHz Plastic Packaged and Chip\|SPST

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AS197-306 数据手册

GaAs FETs as Control Devices

APN2015

-5 V

Gallium arsenide MESFETs are being used in RF control

device applications as switches and attenuators.They are

very easily adapted to monolithic circuit form, dissipate

essentially no power and can easily be designed into

broadband circuits.

5 kΩ

Source

Gate

Drain

The RF signal flows from source to drain, while the RF

isolated gate is the voltage control. The high impedance

“off state” is attained by applying a DC voltage on the gate

more negative than the “pinch-off” voltage (V ). In this

condition the source-drain channel is “pinched off.” The

capacitance is typically 0.25 pF per mm of gate

periphery (see Figure 1A). The “on” state occurs when

zero DC bias is applied to the gate (see Figure 1B). The

channel from source to drain is “open” and represents a

2.5–3.5 Ω resistance per mm of gate periphery.

Figure 1A. MESFET Control Device in

High Impedance State (“Off” State)

0 V

5 kΩ

Gate

A configuration of FETs used in series and shunt normally

produce the optimum switch or attenuator performance in

monolithic circuits (see Figure 2).The only DC current that

flows is the leakage of the gate-source and gate-drain

reverse biased junctions (when negative voltage is applied

to gate). Typical current drain is < 25 µA @ -5 V. This

leakage is a function of the wafer fabrication process, the

device periphery, and magnitude of applied voltage. For

isolation of gate voltage control, 2.5–5 kΩ resistor is

incorporated monolithically in the gate. Since no further

external bias circuitry is required, the switch is inherently

broadband.

Source

Drain

Figure 1B. MESFET Control Device in

Low Impedance State (“On” State)

Voltage variable attenuators (VVAs) use the channel

resistance of the FET as the actual resistance of the circuit

components. The resistance is a nonlinear relationship

with control voltage as shown in Figure 4 (FET with a

“pinch-off” voltage of 1.5 V). Figure 5 shows a TEE VVA

that uses two series FETs and one shunt FET.

The power handling of the switches is primarily limited by

the current handling capability, which is related to the IDSS

of the FET. The IDSS is a function of the gate periphery

which then determines the source-drain capacitance.

The input series FET in switches have a nominal 1 dB

compression of 1 W/mm.

Digital attenuators use FETs configured as “T” or “PI” pads

to achieve a given attenuation value (Figure 3). For the low

loss state V is set to 0 V and V is set to -5 V. For the

attenuation state V is set to -5 V and V is set to 0 V.

Typically digital attenuators are composed of multiple bit

values (e.g. 2, 4, 8, 16 dB AD220-25).

Skyworks Solutions, Inc. [781] 376-3000 • Fax [781] 376-3100 • Email sales@skyworksinc.com • www.skyworksinc.com

Specifications subject to change without notice. 9/03A

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与AS197-306相关器件

型号	品牌	获取价格	描述	数据表
AS197-306LF	SKYWORKS	获取价格	PHEMT GaAs IC High-Power SP2T and SP3T Switch 0.1-2.5 GHz
AS1973-T	AMSCO	获取价格	Low-Voltage Single/Dual/Quad Comparators
AS1974	AMSCO	获取价格	Low-Voltage Single/Dual/Quad Comparators
AS1974-T	AMSCO	获取价格	Low-Voltage Single/Dual/Quad Comparators
AS1975	AMSCO	获取价格	Low-Voltage Single/Dual/Quad Comparators
AS1975-T	AMSCO	获取价格	Low-Voltage Single/Dual/Quad Comparators
AS1976	AMSCO	获取价格	Ultra-Low Current, 1.8V Comparators
AS1976_07	AMSCO	获取价格	Ultra-Low Current, 1.8V Comparators
AS1976_1	AMSCO	获取价格	Ultra-Low Current, 1.8V Comparators
AS1976-T	AMSCO	获取价格	Ultra-Low Current, 1.8V Comparators

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