Datasheet > ARS50DL-LF

ARS50DL-LF

更新时间： 2024-11-24 19:03:43

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	33K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon,

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数据手册

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ARS50DL-LF 数据手册

AR/S50AL – AR/S50JL

50A LEADED AUTOMOTIVE BUTTON DIODE

WON-TOP ELECTRONICS

Features



Diffused Junction



Low Leakage

Low Cost

High Surge Current Capability

Low Cost Construction Utilizing Void-Free

Molded Plastic Technique

Mechanical Data



Case: ARL or ARSL, Molded Plastic

Terminals: Plated Terminals Solderable per

MIL-STD-202, Method 208



Polarity: Color Ring Denotes Cathode End

Weight: 2.0 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 3

ARL

ARSL

Dim

Min

9.70

5.50

1.27

25.00

Max

Min

8.30

5.50

1.27

Max

8.90

6.30

1.35

—

10.40

6.30

1.35

—

25.00

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

AR/S

50AL

AR/S

50BL

AR/S

50DL

AR/S

50GL

AR/S

50JL

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

400

280

600

RMS Reverse Voltage

VR(RMS)

140

420

Average Rectified Output Current

@T_C= 60°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

500

1.1

Forward Voltage

@I_F= 50A

VFM

IRM

Peak Reverse Current

@T_A= 25°C

5.0

100

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

400

1.0

°C/W

°C

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal Resistance: Junction to case, single side cooled.

Revision: April, 2012

www.wontop.com

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