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ARS50G PDF预览

ARS50G

更新时间: 2024-01-10 08:42:01
品牌 Logo 应用领域
TSC 二极管
页数 文件大小 规格书
2页 73K
描述
50.0 AMPS. High Current Plastic Silicon Rectifiers

ARS50G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC, ARS, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PEDB-N2湿度敏感等级:1
最大非重复峰值正向电流:500 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-50 °C
最大输出电流:50 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:3 µs
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ARS50G 数据手册

 浏览型号ARS50G的Datasheet PDF文件第2页 
ARS50 / AR50  
50.0 AMPS. High Current Plastic Silicon Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
50.0 Amperes  
ARS  
AR  
Features  
Plastic material used carries Underwriters  
Laboratory Classification 94V-O  
Low cost construction utilizing void-free molded  
plastic technique  
Low cost  
Diffused junction  
Low leakage  
High surge capability  
High temperature soldering guaranteed:  
260oC for 10 seconds  
Mechanical Data  
Case: Molded plastic case  
Terminals: Plated terminals, solderable per MIL-  
STD-202, Method 208  
Polarity: Color ring denotes cathode end  
Weight: 0.07 ounce, 1.8 grams  
Mounting position: Any  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
ARS ARS ARS ARS ARS ARS ARS  
50A  
AR  
50A  
50B  
AR  
50B  
50D  
AR  
50D  
50G  
AR  
50G  
50J  
AR  
50J  
50K 50M  
AR AR  
50K 50M  
Symbol  
Type Number  
Units  
Maximum Recurrent Peak Revere Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
50 100 200 400 600 800 1000  
35 70 140 280 420 560 700  
50 100 200 400 600 800 1000  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
@Tc = 135  
I(AV)  
A
A
V
50  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method ) at TJ=150oC  
IFSM  
500  
1.1  
Maximum Instantaneous Forward Voltage  
@ 50A  
VF  
IR  
Maximum DC Reverse Current @ Tc=25℃  
at Rated DC Blocking Voltage @ Tc=100℃  
5.0  
250  
3.0  
uA  
uA  
Typical Reverse Recovery Time (Note 2)  
Trr  
Cj  
uS  
Typical Junction Capacitance ( Note 1 )  
TJ=25oC  
pF  
300  
/W  
Typical Thermal Resistance ( Note 3 )  
Operating and Storage Temperature Range  
RθJC  
TJ, TSTG  
1.0  
-50 to +175  
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
3. Thermal Resistance from Junction to Case, Singe Side Cooled.  
- 504 -  

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