ARF450

更新时间： 2024-01-18 18:10:17

品牌	Logo	应用领域
ADPOW		晶体射频场效应晶体管放大器
页数	文件大小	规格书
4页	179K
描述
N-CHANNEL ENHANCEMENT MODE

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技术参数
数据手册

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ARF450 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

ARF450 数据手册

Common Source

Push-Pull Pair

ARF450

BeO

11405

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

150V 500W 120MHz

The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull

or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

Specified 150 Volt, 81.36 MHz Characteristics:

High Performance Push-Pull RF Package.

Very High Breakdown for Improved Ruggedness.

Low Thermal Resistance.

Output Power = 500 Watts.

Gain = 13dB (Class C)

Efficiency = 75%

Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

Symbol Parameter

ARF450

450

UNIT

Volts

Amps

V_DSS

Drain-Source Voltage

V_DGO

I_D

Drain-Gate Voltage

450

Continuous Drain Current @ T_C= 25°C

Gate-Source Voltage

V_GS

P_D

±30

Volts

Total Device Dissipation @ T_C= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

650

Watts

T_J,T_STG

T_L

-55 to 200

300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250 µA)

500

Volts

V_DS

On State Drain Voltage (I_D_(ON)= 5.5A, V_GS= 10V)

(ON)

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Forward Transconductance (V_DS= 25V, I_D= 5.5A)

I_DSS

µA

250

±100

I_GSS

g_fs

35.8

mhos

g_fs1g_fs2

0.9

1.1

Forward Transconductance Ratio (V_DS= 25V, I_D= 5.5A)

Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

V_GS

(TH)

Volts

∆V_GS

0.1

Delta Gate Threshold Voltage (V_DS= V_GS, I_D= 50mA)

(TH)

THERMAL CHARACTERISTICS

Symbol Characteristic (per package unless otherwise noted)

MIN

TYP

MAX

UNIT

R_θJC

R_θCS

Junction to Case (per section)

0.54

°C/W

Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

0.1

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA:

405 S.W. Columbia Street

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541)382-8028 FAX:(541)388 -0364

Phone:(33) 557 92 15 15 FAX:(33)556479761

EUROPE:

Chemin de Magret

12 3 4

中文翻译

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