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AR4PJHM3_A/I PDF预览

AR4PJHM3_A/I

更新时间: 2024-11-18 17:28:03
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管局域网光电二极管
页数 文件大小 规格书
5页 95K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, TO-277A,

AR4PJHM3_A/I 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:12 weeks
风险等级:5.63其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.6 V
JEDEC-95代码:TO-277AJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:65 A元件数量:1
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:600 V最大反向电流:10 µA
最大反向恢复时间:0.14 µs表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AR4PJHM3_A/I 数据手册

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AR4PD, AR4PG, AR4PJ  
Vishay General Semiconductor  
www.vishay.com  
Fast Switching Avalanche Surface Mount Rectifiers  
FEATURES  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
eSMP® Series  
• Glass passivated pellet chip junction  
• Fast reverse recovery time  
• Controlled avalanche characteristics  
• Low leakage current  
K
1
• High forward surge capability  
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
TO-277A (SMPC)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHM3  
Anode 1  
Anode 2  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
TYPICAL APPLICATIONS  
For use in lighting, fast switching rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
4.0 A  
VRRM  
IFSM  
200 V, 400 V, 600 V  
65 A  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
trr  
140 ns  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified   
(“_X” denotes revision code e.g. A, B,.....)  
-
halogen-free, RoHS-compliant, and  
EAS  
20 mJ  
VF at IF = 4.0 A  
TJ max.  
Package  
Diode variation  
1.02 V  
- halogen-free, RoHS-compliant and  
175 °C  
TO-277A (SMPC)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
AR4PD  
AR4D  
200  
AR4PG  
AR4G  
400  
AR4PJ  
AR4J  
600  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
V
A
(1)  
IF  
4.0  
Maximum DC forward current (fig. 1)  
(2)  
IF  
2.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
65  
A
IAS = 2.5 A max.  
AS = 1.0 A typ.  
Operating junction and storage temperature range  
20  
30  
Non-repetitive avalanche energy at TJ = 25 °C  
EAS  
mJ  
°C  
I
TJ, TSTG  
-55 to +175  
Notes  
(1)  
Mounted on 30 mm x 30 mm pad areas, 1 oz. FR4 PCB  
Free air, mounted on recommended pad area  
(2)  
Revision: 23-Feb-16  
Document Number: 89334  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

AR4PJHM3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
AR4PJHM3/87A VISHAY

完全替代

DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLAS

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