型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT50A120D1 | ADPOW |
获取价格 |
Phase leg Trench IGBT Power Module | |
APTGT50A120T | ADPOW |
获取价格 |
Phase leg Fast Trench + Field Stop IGBT Power Module | |
APTGT50A120T1G | MICROSEMI |
获取价格 |
Phase leg Fast Trench + Field Stop IGBT? Power Module | |
APTGT50A120T1G-Module | MICROCHIP |
获取价格 |
Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 50Silicon type: T | |
APTGT50A120TG | MICROSEMI |
获取价格 |
Phase leg Fast Trench + Field Stop IGBT Power Module | |
APTGT50A170D1 | ADPOW |
获取价格 |
Phase leg Trench IGBT Power Module | |
APTGT50A170T | ADPOW |
获取价格 |
Phase leg Trench + Field Stop IGBT Power Module | |
APTGT50A170T | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, MODULE-12 | |
APTGT50A170T1G | MICROSEMI |
获取价格 |
Phase leg Trench + Field Stop IGBT® Power Mod | |
APTGT50A170T1G-Module | MICROCHIP |
获取价格 |
Configuration: Phase legVCES (V): 1700VCESat (V): 2Current (A) Tc=80C: 50Silicon type: TRE |