Datasheet > AP93T08GP-HF

AP93T08GP-HF

更新时间： 2024-11-18 12:26:03

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	56K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP93T08GP-HF 数据手册

AP93T08GP-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

80V

4.6mΩ

140A

▼ Lower On-resistance

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP93T08 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-220(P)

The TO-220 package is widely preferred for all commercial-industrial

through hole applications. The low thermal resistance and low

package cost contribute to the worldwide popular package.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current (Chip)

Continuous Drain Current, V_GS@ 10V³

140

Pulsed Drain Current¹

320

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

156

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maixmum Thermal Resistance, Junction-ambient

0.8

Rthj-a

Data and specifications subject to change without notice

201304171

12 3 4

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