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AP9408GM-HF PDF预览

AP9408GM-HF

更新时间: 2024-11-21 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体栅极开关晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
4页 64K
描述
Lower Gate Charge, Fast Switching Characteristic

AP9408GM-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.67
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏源导通电阻:0.01 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):52 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP9408GM-HF 数据手册

 浏览型号AP9408GM-HF的Datasheet PDF文件第2页浏览型号AP9408GM-HF的Datasheet PDF文件第3页浏览型号AP9408GM-HF的Datasheet PDF文件第4页 
AP9408GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
30V  
D
D
D
Simple Drive Requirement  
10mΩ  
13.3A  
D
Fast Switching Characteristic  
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
D
S
G
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
13.3  
A
11.7  
A
52  
A
PD@TA=25℃  
Total Power Dissipation  
3
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201012223  

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