生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | ROHS COMPLIANT, SOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.75 |
风险等级: | 5.13 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP4800AGM_07 | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4800AGM-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4800BGM | A-POWER |
获取价格 |
TRANSISTOR 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET Gener | |
AP4800BGM-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4800CGM-HF | A-POWER |
获取价格 |
Lower Gate Charge, Simple Drive Requirement | |
AP4800DGM-HF | A-POWER |
获取价格 |
Lower Gate Charge, Simple Drive Requirement | |
AP4800GEM | A-POWER |
获取价格 |
SO-8 | |
AP4800GM | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4800GYT-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Size & Lower Profile | |
AP4800M | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |