生命周期: | Contact Manufacturer | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.75 |
风险等级: | 5.68 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 50 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP4835GM-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP4835GMT-HF | A-POWER |
获取价格 |
Simple Drive Requirement, SO-8 Compatible | |
AP4836 | HAMMOND |
获取价格 |
Panels for N1A Series Enclosures | |
AP4880BGM-HF | A-POWER |
获取价格 |
Low On-resistance, Simple Drive Requirement | |
AP4880GEM | A-POWER |
获取价格 |
Simple Drive Requirement, Fast Switching Characteristic | |
AP4880GM | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4880M | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4920GM | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP4920GM-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Low On-resistance | |
AP4920M | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |