Datasheet > AP4810GSM

AP4810GSM

更新时间： 2024-10-02 12:52:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
4页	110K
描述
Simple Drive Requirement, Good Recovery Time

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AP4810GSM 数据手册

AP4810GSM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL MOSFET WITH SCHOTTKY

DIODE

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

13.5mΩ

11A

▼ Good Recovery Time

▼ Fast Switching Performance

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

Schottky Diode

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

9.3

V_KA

Schottky Reverse Voltage

Continous Forward Current

I_F@T_A=25℃

I_FM

Pulsed Diode Forward Current

Max Power Dissipation (MOSFET)

Max Power Dissipation (Schottky)

Storage Temperature Range

℃

P_D@T_A=25℃

2.5

2.0

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Maximum Thermal Resistance, Junction-ambient³(MOSFET)

Maximum Thermal Resistance, Junction-ambient³(Schottky)

Rthj-a

Data and specifications subject to change without notice

200910296

12 3 4

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