AP4230GM-HF

更新时间： 2024-11-15 12:26:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极驱动
页数	文件大小	规格书
4页	99K
描述
Lower Gate Charge, Simple Drive Requirement

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AP4230GM-HF 数据手册

AP4230GM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

25mΩ

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ Halogen Free & RoHS Compliant Product

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

SO-8

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

5.5

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200909171

12 3 4

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