AP4232GM-HF

更新时间： 2024-11-15 12:26:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		驱动
页数	文件大小	规格书
5页	213K
描述
Low On-Resistance, Simple Drive Requirement

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数据手册

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AP4232GM-HF 数据手册

AP4232GM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-Resistance

BV_DSS

R_DS(ON)

I_D

30V

22mΩ

7.8A

▼ Simple Drive Requirement

▼ Dual N MOSFET Package

▼ RoHS Compliant

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

7.8

6.2

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200901203

12 3 4 5

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