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AP2532GY PDF预览

AP2532GY

更新时间: 2024-11-18 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 122K
描述
Low Gate Charge, Fast Switching Performance

AP2532GY 技术参数

生命周期:Obsolete包装说明:ROHS COMPLIANT PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.82Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):2.4 A最大漏源导通电阻:0.13 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2532GY 数据手册

 浏览型号AP2532GY的Datasheet PDF文件第2页浏览型号AP2532GY的Datasheet PDF文件第3页浏览型号AP2532GY的Datasheet PDF文件第4页浏览型号AP2532GY的Datasheet PDF文件第5页浏览型号AP2532GY的Datasheet PDF文件第6页浏览型号AP2532GY的Datasheet PDF文件第7页 
AP2532GY  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
D2  
Low Gate Charge  
N-CH BVDSS  
30V  
130mΩ  
2.4A  
S1  
Fast Switching Performance  
Surface Mount Package  
RDS(ON)  
D1  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
-30V  
SOT-26  
G1  
250mΩ  
-1.8A  
Description  
ID  
Advanced Power MOSFETs utilized advanced processing  
techniques to achieve the lowest possible on-resistance,  
extremely efficient and cost-effectiveness device.  
D2  
S2  
D1  
The SOT-26 package is widely used for commercial surface  
mount applications.  
G1  
G2  
S1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
30  
±20  
2.4  
1.9  
10  
V
V
Gate-Source Voltage  
±20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-1.8  
A
-1.4  
A
-10  
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
1.14  
0.01  
W
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
110  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
201018074-1/7  

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