Datasheet > AP2535GEY

AP2535GEY

更新时间： 2024-09-16 17:15:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	124K
描述
SOT-26

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中文翻译

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数据手册

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AP2535GEY 数据手册

AP2535GEY-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Capable of 1.8V Gate Drive

N-CH BV_DSS

20V

32mΩ

4.6A

▼ Lower Gate Charge

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-20V

SOT-26

80mΩ

-3.1A

Description

I_D

AP2535 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide range

of power applications.

The SOT-26 package is widely used for commercial surface

mount applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-20

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

4.6

3.7

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-3.1

-2.5

-12

P_D@T_A=25℃

T_STG

Total Power Dissipation

1.13

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

110

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201501212

12 3 4 5 6 7 8

中文翻译

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