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AN-9008 PDF预览

AN-9008

更新时间: 2022-11-25 11:11:44
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 转换器
页数 文件大小 规格书
9页 127K
描述
The Use of QFETs in a Flyback Converter

AN-9008 数据手册

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July, 2000  
AN9008  
The Use of QFETs in a Flyback Converter  
By Il Soo Yang  
Introduction  
Power supply designers face many challenges in designing more efficient and cost-effective power  
supplies. Efficiency is a major consideration in designing switching power supplies. Many factors in  
the design process such as the input filter capacitance, transformer core geometry and construc-  
tion, output rectifier, and switching device etc., affect the efficiency of switching power supplies.  
Among the losses all components generate, switching device losses occupy about 30%. Hence,  
selecting MOSFETs with optimum efficiency and high reliability is very crucial in power supply  
design. This application note compares the key characteristics, power losses, and efficiency of the  
new QFET and a conventional MOSFET in a 60 watt flyback converter operated at 180 to 265  
VAC.  
QFET Characteristics  
Almost all the power supplies used in TVs, VCRs, PCs, fax machines, and other home appliances  
rely on a switching circuit to convert the AC wall power to DC power or DC to AC. Thus, they are  
referred to as switched mode power supplies. To obtain high efficiency, it is crucial for designers to  
select switching MOSFETs to give very low losses in the circuits. MOSFETs must exhibit low con-  
duction and switching losses with safety qualifications. Fairchild Semiconductor, in extending its  
commitment to develop high quality MOSFETs, now offers new high efficiency QFETs for switched  
mode power supply applications.  
A power QFET, rated at 600V and used in a 60 watt flyback converter, features a gate charge rat-  
ing which is 45 percent lower than existing devices for improved switching and drive efficiency. Fig-  
ure 1 compares the new QFET FQP7N60 with its conventional MOSFET counterpart. By using  
unified singular well stripe technology, the Miller capacitance of the new QFET is reduced by about  
40 percent.  
Rev D, July 2000  
1

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