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AMP374P6453BT1C1H PDF预览

AMP374P6453BT1C1H

更新时间: 2024-11-07 21:54:59
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
12页 75K
描述
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs

AMP374P6453BT1C1H 数据手册

 浏览型号AMP374P6453BT1C1H的Datasheet PDF文件第2页浏览型号AMP374P6453BT1C1H的Datasheet PDF文件第3页浏览型号AMP374P6453BT1C1H的Datasheet PDF文件第4页浏览型号AMP374P6453BT1C1H的Datasheet PDF文件第5页浏览型号AMP374P6453BT1C1H的Datasheet PDF文件第6页浏览型号AMP374P6453BT1C1H的Datasheet PDF文件第7页 
AVED MEMORY PRODUCTS  
Where Quality & Memory Merge  
AMP374P6453BT1-C1H/S  
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs WITH SPD  
DESCRIPTION  
AVED Memory Products AMP374P6453BT1-C1H/S is a 64M bit X 72 Synchronous Dynamic RAM high density  
memory module. The AVED Memory Products AMP374P6453BT1-C1H/S consists of eighteen CMOS 32M X 8 bit  
with 4 banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a  
168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in  
parallel for each SDRAM.  
The AVED Memory Products AMP374P6453BT1-C1H/S is a Dual In-Line Memory Module and is intended for mount-  
ing into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system  
clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies  
allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.  
APPLICATION  
Main Memory unit for computer, Microcomputer memory,  
Refresh memory for CRT.  
FEATURES  
Performance Ranges  
PIN NAMES  
Part Identification  
Pin Name  
Function  
Address Input (multiplexed)  
Select Bank  
Data Input/Output  
Check Bit (Data-in/out)  
Clock Input  
Clock Enable Input  
Chip Select Input  
Row Address Strobe  
Column Address Strobe  
Write Enable  
- AMP374P6453BT1-C1H/S  
8k cycles/64ms Ref, TSOP, Gold Contact Plating  
- PC100 Compliant  
A0 - A12  
BA0 - BA1  
DQ0 - DQ63  
CB0 - 7  
CLK0 - CLK3  
CKE0 - CKE1  
CS0 - CS3  
RAS  
CAS  
WE  
DQM0 - 7  
VDD  
Part #  
Maximum Frequency/Speed  
AMP374P6453BT1-C1H/S PC100MHz (10ns @ CL=2)  
Burst Mode Operation  
Auto & Self Refresh capability (8k cycles/64ms)  
LVTTL compatible inputs and outputs  
DQM  
Power Supply(3.3V)  
Ground  
Power Supply for Reference  
Serial Address Data I/O  
Serial Clock  
Vss  
*VREF  
SDA  
SCL  
SA0 - 2  
WP  
Single 3.3V 0.3V power supply  
±
MRS cycle with address key programs  
Latency (Access from column address)  
Burst Length (1, 2, 4, 8 & Full Page)  
Data Scramble (Sequential & Interleave)  
All inputs are sampled at the positive  
going edge of the system clock  
Address in EEPROM  
Write Protect  
DU  
NC  
Don’t Use  
No Connection  
Serial Presence Detect with EEPROM  
Revision: 1.1  
Revision Date: 11/2000  
Document Number: 65830  
Page Number: 1 of 12  

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