Datasheet > AMDD14N25CRH

AMDD14N25CRH

更新时间： 2024-10-29 17:15:23

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美格纳 - MGCHIP		/
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AMDD14N25CRH 数据手册

AMDD14N25CRH

N-Channel MOSFET 250V, 10.2A, 0.28Ω

Features

General Description



V_DS= 250V

I_D= 10.2A

This N-channel MOSFET is produced using advanced

Magnachip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

R_DS(ON)≤ 0.28Ω @V_GS= 10V

AEC-Q101 qualified

Pb-free plating, halogen-free

Applications

This device is suitable for SMPS, high speed switching and

automotive or industrial purpose applications.



Power supply

Motor control

Car inverter

High current, high speed switching

Absolute maximum ratings (Tc = 25^oC unless otherwise specified)

Characteristics

Symbol

V_DSS

Rating

250

Unit

Drain-source voltage

Gate-source voltage

V_GSS

±30

T_C=25^oC

10.2

7.2

Continuous drain current

Pulsed drain current⁽¹⁾

Power dissipation

I_D

T_C=100^oC

I_DM

P_D

40.8

144

T_C=25^oC

Derate above 25^oC

0.96

4.5

W/ ^oC

V/ns

Peak diode recovery dv/dt⁽³⁾

Repetitive avalanche energy⁽¹⁾

Avalanche current⁽¹⁾

dv/dt

E_AR

6.94

10.2

550

I_AR

Single pulse avalanche energy⁽⁴⁾

E_AS

^oC

Junction and storage temperature range

T_j, T_stg

-55~175

Thermal characteristics

Characteristics

Symbol

R_θJA

Rating

41.9

Unit

Thermal resistance, junction-to-ambient⁽¹⁾

Thermal resistance, junction-to-case⁽¹⁾

^oC/W

R_θJC

1.04

Oct. 2023 Version 1.0

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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