Datasheet > AM54BDS128AGBC9FT

AM54BDS128AGBC9FT

更新时间： 2024-11-16 21:09:31

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ADVANCE INFORMATION

Am54BDS128AG

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

Two Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation,

Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM

DISTINCTIVE CHARACTERISTICS

■ Power dissipation (typical values, C_L= 30 pF)

MCP Features

■ Power supply voltage of 1.65 to 1.95 volt

— Burst Mode Read: 10 mA

— Simultaneous Operation: 25 mA

■ High performance

— Program/Erase: 15 mA

— Access time as fast as 70 ns/ 54 Mhz Burst

— Standby mode: 0.4 µA

■ Package

Hardware features

— 93-Ball FBGA

■ Software command sector locking

■ Operating Temperature

— –40°C to +85°C

■ Handshaking: host monitors operations via RDY

output

Flash Memory Features

■ Hardware reset input (RESET#)

■ WP# input

ARCHITECTURAL ADVANTAGES

— Write protect (WP#) function protects sectors 0, 1

(bottom boot) or sectors 132 and 133 (top boot),

regardless of sector protect status

■ Single 1.8 volt read, program and erase (1.65 to 1.95

volt)

■ Manufactured on 0.17 µm process technology

■ Simultaneous Read/Write operation

■ ACC input: Acceleration function reduces

programming time; all sectors locked when ACC = V_IL

— Data can be continuously read from one bank while

executing erase/program functions in other bank

■ CMOS compatible inputs, CMOS compatible outputs

■ Low V_CCwrite inhibit

— Zero latency between read and write operations

— Four bank architecture: 16Mb/16Mb/16Mb/16Mb

SOFTWARE FEATURES

■ Programmable Burst Interface

■ Supports Common Flash Memory Interface (CFI)

— 2 Modes of Burst Read Operation

— Linear Burst: 8, 16, and 32 words with wrap-around

— Continuous Sequential Burst

■ Software command set compatible with JEDEC 42.4

standards

■ Data# Polling and toggle bits

■ Erase Suspend/Resume

■ Sector Architecture

— Eight 8 Kword sectors and one hundred twenty-six 32

Kword sectors

— Suspends or resumes an erase operation in one

sector to read data from, or program data to, other

sectors

— Banks A and D each contain four 8 Kword sectors

and thirty-one 32 Kword sectors; Banks B and C

each contain thirty-two 32 Kword sectors

■ Unlock Bypass Program command

— Eight 8 Kword boot sectors, four at the top of the

address range, and four at the bottom of the address

range

— Reduces overall programming time when issuing

multiple program command sequences

SRAM Features

■ Power dissipation

■ Minimum 1 million erase cycle guarantee per sector

■ 20-year data retention at 125°C

— Operating: 3 mA maximum

— Standby: 15 µA maximum

PERFORMANCE CHARCTERISTICS

■ Read access times at 54/40 MHz

■ CE1s# and CE2s Chip Select

— Burst access times of 13.5/20 ns @ 30 pF at industrial

temperature range

■ Power down features using CE1s# and CE2s

■ Data retention supply voltage: 1.0 to 2.2 volt

— Asynchronous random access times of 70 ns (at 30

pF)

■ Byte data control: LB#s (DQ7–DQ0), UB#s

(DQ15–DQ8)

— Synchronous latency of 87.5/95 ns

Publication# 26628 Rev: A+1Amendment/+0

Issue Date: December 8, 2002

This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you

evaluate this product. Do not design in this product without contacting the factory. AMD reserves the right to change or discontinue work

on this proposed product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM54BDS128AGBC9FT相关器件

型号	品牌	获取价格	描述	数据表
AM54BDS128AGBC9IS	SPANSION	获取价格	Memory Circuit, Flash+SRAM, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBC9IT	SPANSION	获取价格	Memory Circuit, Flash+SRAM, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD8FS	SPANSION	获取价格	Memory Circuit, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD8FT	SPANSION	获取价格	Memory Circuit, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD8IS	SPANSION	获取价格	Memory Circuit, Flash+SRAM, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD8IT	SPANSION	获取价格	Memory Circuit, Flash+SRAM, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD9FS	SPANSION	获取价格	Memory Circuit, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD9FT	SPANSION	获取价格	Memory Circuit, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD9IS	SPANSION	获取价格	Memory Circuit, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93
AM54BDS128AGBD9IT	SPANSION	获取价格	Memory Circuit, 8MX16, CMOS, PBGA93, 10 X 10 MM, FPBGA-93

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