Datasheet > AM50DL9608GB85IS

AM50DL9608GB85IS

更新时间： 2024-02-10 03:39:35

品牌	Logo	应用领域
飞索 - SPANSION		静态存储器
页数	文件大小	规格书
67页	990K
描述
Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

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AM50DL9608GB85IS 数据手册

PRELIMINARY

Am50DL9608G

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and

8 Mbit (512 K x 16-Bit) Pseudo Static RAM

DISTINCTIVE CHARACTERISTICS

—

Access time as fast as 70 ns

Program time: 4 µs/word typical utilizing Accelerate function

MCP Features

■ Power supply voltage of 2.7 to 3.3 volt

■ Ultra low power consumption (typical values)

■ High performance

—

2 mA active read current at 1 MHz

10 mA active read current at 5 MHz

200 nA in standby or automatic sleep mode

—

Access time as fast as 70 ns

■ Package

■ Minimum 1 million write cycles guaranteed per sector

—

73-Ball FBGA

■ Operating Temperature

■ 20 year data retention at 125°C

—

–40°C to +85°C

—

Reliable operation for the life of the system

Flash Memory Features

SOFTWARE FEATURES

(Am29DL640G/Am29DL320G)

■ Supports Common Flash Memory Interface (CFI)

—

Features apply to Am29DL640G and Am29DL320G

independently.

■ Program/Erase Suspend/Erase Resume

—

Suspends program/erase operations to allow

programming/erasing in same bank

ARCHITECTURAL ADVANTAGES

■ Data# Polling and Toggle Bits

■ Simultaneous Read/Write operations

—

Provides a software method of detecting the status of

program or erase cycles

—

Data can be continuously read from one bank while

executing erase/program functions in another bank.

Zero latency between read and write operations

—

HARDWARE FEATURES

■ Flexible Bank architecture

■ Any combination of sectors can be erased

—

Read may occur in any of the three banks not being written

■ Ready/Busy# output (RY/BY#)

or erased.

—

Hardware method for detecting program or erase cycle

completion

—

Four banks may be grouped by customer to achieve desired

bank divisions.

■ Hardware reset pin (RESET#)

■ Manufactured on 0.17 µm process technology

—

Hardware method of resetting the internal state machine to

the read mode

■ SecSi™ (Secured Silicon) Sector

—

Extra 256 byte sector on Am29DL640G

Extra 256 byte sector on Am29DL320G

■ WP#/ACC input pin

—

Write protect (WP#) protects sectors 0, 1, 140, and 141 in

Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number; verifiable

as factory locked through autoselect function. ExpressFlash

option allows entire sector to be available for

factory-secured data

Am29DL640G, and two outermost boot sectors in

Am29DL320G

—

Acceleration (ACC) function accelerates program timing

■ Sector protection

—

Customer lockable: Sector is one-time programmable. Once

sector is locked, data cannot be changed.

—

Hardware method of locking a sector, either in-system or

using programming equipment, to prevent any program or

■ Zero Power Operation

Sophisticated power management circuits reduce power

consumed during inactive periods to nearly zero.

■ Boot sectors

erase operation within that sector

Temporary Sector Unprotect allows changing data in

protected sectors in-system

—

Pseudo SRAM Features

—

Top and bottom boot sectors in Am29DL640G

■ Power dissipation

—

Top or bottom boot options in Am29DL320G

—

Operating: 30 mA maximum

Standby: 70 µA maximum

■ Compatible with JEDEC standards

—

Pinout and software compatible with single-power-supply

flash standard

■ CE1s# and CE2s Chip Select

■ Power down features using CE1s# and CE2s

■ Data retention supply voltage: 2.7 to 3.3 volt

■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)

PERFORMANCE CHARACTERISTICS

■ High performance

Publication# 27025 Rev:A Amendment/+1

Issue Date: October 14, 2002

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice. 10/15/02

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM50DL9608GB85IS相关器件

型号	品牌	获取价格	描述	数据表
AM50DL9608GB85IT	SPANSION	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM50DL9608GT70FS	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM50DL9608GT70IS	SPANSION	获取价格	64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous O
AM50DL9608GT70IT	SPANSION	获取价格	64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous O
AM50DL9608GT75FS	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM50DL9608GT75FT	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM50DL9608GT75IS	SPANSION	获取价格	64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous O
AM50DL9608GT75IT	SPANSION	获取价格	64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous O
AM50DL9608GT85FS	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM50DL9608GT85FT	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

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