Datasheet > AM42DL3224GB71IT

AM42DL3224GB71IT

更新时间： 2024-11-13 20:17:47

品牌	Logo	应用领域
飞索 - SPANSION		静态存储器内存集成电路
页数	文件大小	规格书
64页	1131K
描述
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

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AM42DL3224GB71IT 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	8 X 11.60 MM, FBGA-73
针数：	73	Reach Compliance Code：	not_compliant
HTS代码：	8542.32.00.71	风险等级：	5.23
Is Samacsys：	N	最长访问时间：	70 ns
其他特性：	PSEUDO SRAM IS ORGANISED AS 256K X 16; FLASH CAN ALSO BE ORGANISED AS 4M X 8	JESD-30 代码：	R-PBGA-B73
JESD-609代码：	e0	长度：	11.6 mm
内存密度：	33554432 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	混合内存类型：	FLASH+SRAM
湿度敏感等级：	3	功能数量：	1
端子数量：	73	字数：	2097152 words
字数代码：	2000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	LFBGA	封装等效代码：	BGA73,10X12,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	240	电源：	3 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
子类别：	Other Memory ICs	最大压摆率：	0.045 mA
最大供电电压 (Vsup)：	3.3 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	宽度：	8 mm
Base Number Matches：	1

AM42DL3224GB71IT 数据手册

PRELIMINARY

Am42DL32x4G

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash

Memory and 4 Mbit (256 K x 16-Bit) Static RAM

DISTINCTIVE CHARACTERISTICS

SOFTWARE FEATURES

MCP Features

■ Power supply voltage of 2.7 to 3.3 volt

■ Data Management Software (DMS)

—

AMD-supplied software manages data programming and

erasing, enabling EEPROM emulation

Eases sector erase limitations

■ High performance

—

Flash Access time as fast as 70 ns

SRAM access time as fast as 55 ns

—

■ Supports Common Flash Memory Interface (CFI)

■ Erase Suspend/Erase Resume

■ Package

—

73-Ball FBGA

—

Suspends erase operations to allow programming in same

bank

■ Operating Temperature

—

–40°C to +85°C

■ Data# Polling and Toggle Bits

—

Provides a software method of detecting the status of

program or erase cycles

Flash Memory Features

■ Unlock Bypass Program command

ARCHITECTURAL ADVANTAGES

—

Reduces overall programming time when issuing multiple

program command sequences

■ Simultaneous Read/Write operations

—

Data can be continuously read from one bank while

executing erase/program functions in other bank

Zero latency between read and write operations

HARDWARE FEATURES

—

■ Any combination of sectors can be erased

■ Secured Silicon (SecSi) Sector: Extra 256 Byte sector

■ Ready/Busy# output (RY/BY#)

—

Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number; verifiable

as factory locked through autoselect function.

Customer lockable: Sector is one-time programmable. Once

locked, data cannot be changed

—

Hardware method for detecting program or erase cycle

completion

—

■ Hardware reset pin (RESET#)

—

Hardware method of resetting the internal state machine to

reading array data

■ Zero Power Operation

Sophisticated power management circuits reduce power

consumed during inactive periods to nearly zero

—

■ WP#/ACC input pin

—

Write protect (WP#) function allows protection of two outermost

boot sectors, regardless of sector protect status

■ Top or bottom boot block

—

Acceleration (ACC) function accelerates program timing

■ Manufactured on 0.17 µm process technology

■ Compatible with JEDEC standards

■ Sector protection

—

Hardware method of locking a sector, either in-system or

using programming equipment, to prevent any program or

erase operation within that sector

—

Pinout and software compatible with single-power-supply

flash standard

—

Temporary Sector Unprotect allows changing data in

protected sectors in-system

PERFORMANCE CHARACTERISTICS

■ High performance

—

Access time as fast as 70 ns

SRAM Features

■ Power dissipation

Program time: 4 µs/word typical utilizing Accelerate function

■ Ultra low power consumption (typical values)

—

Operating: 22 mA maximum for 70 ns, 30 mA maximum for

—

2 mA active read current at 1 MHz

55 ns

10 mA active read current at 5 MHz

200 nA in standby or automatic sleep mode

—

Standby: 10 µA maximum

■ CE1s# and CE2s Chip Select

■ Minimum 1 million write cycles guaranteed per sector

■ 20 Year data retention at 125°C

■ Power down features using CE1s# and CE2s

■ Data retention supply voltage: 1.5 to 3.3 volt

■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)

—

Reliable operation for the life of the system

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 25822 Rev: B Amendment/0

Issue Date: May 19, 2003

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM42DL3224GB71IT相关器件

型号	品牌	获取价格	描述	数据表
AM42DL3224GB75FT	SPANSION	获取价格	Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3224GB75IT	SPANSION	获取价格	Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3224GB85FT	SPANSION	获取价格	Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3224GB85IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3224GB85IT	SPANSION	获取价格	Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
AM42DL3224GT25IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3224GT30IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3224GT35IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3224GT40IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM42DL3224GT55IT	AMD	获取价格	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem

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