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AM29PL160CB120KI PDF预览

AM29PL160CB120KI

更新时间： 2024-11-28 03:18:39
品牌 Logo 应用领域
飞索 - SPANSION 可编程只读存储器光电二极管
页数 文件大小 规格书
40页 768K
描述
2MX8 FLASH 3V PROM, 120ns, PDSO44, REVERSE, MO-180AA, SOP-44

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AM29PL160CB120KI 数据手册

 浏览型号AM29PL160CB120KI的Datasheet PDF文件第2页浏览型号AM29PL160CB120KI的Datasheet PDF文件第3页浏览型号AM29PL160CB120KI的Datasheet PDF文件第4页浏览型号AM29PL160CB120KI的Datasheet PDF文件第5页浏览型号AM29PL160CB120KI的Datasheet PDF文件第6页浏览型号AM29PL160CB120KI的Datasheet PDF文件第7页 
PRELIMINARY  
Am29PL160C  
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)  
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ 16 Mbit Page Mode device  
■ Sector Protection  
— Byte (8-bit) or word (16-bit) mode selectable via  
BYTE# pin  
— A hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
— Page size of 16 bytes/8 words: Fast page read  
access from random locations within the page  
— Sectors can be locked via programming  
equipment  
■ Single power supply operation  
— Temporary Sector Unprotect command  
sequence allows code changes in previously  
locked sectors  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
■ Minimum 1 million write cycles guarantee  
per sector  
■ 20-year data retention  
■ 5 V-tolerant data, address, and control signals  
■ High performance read access times  
■ Manufactured on 0.32 µm process technology  
■ Software command-set compatible with JEDEC  
— Page access times as fast as 25 ns at industrial  
temperature range  
standard  
— Backward compatible with Am29F and Am29LV  
families  
— Random access times as fast as 65 ns  
■ Power consumption (typical values at 5 MHz)  
— 30 mA read current  
■ CFI (Common Flash Interface) compliant  
— Provides device-specific information to the  
system, allowing host software to easily  
reconfigure for different Flash devices  
— 20 mA program/erase current  
— 1 µA standby mode current  
■ Unlock Bypass Program Command  
— 1 µA Automatic Sleep mode current  
■ Flexible sector architecture  
— Reduces overall programming time when  
issuing multiple program command sequences  
— Sector sizes: One 16 Kbyte, two 8 Kbyte, one  
224 Kbyte, and seven sectors of 256 Kbytes  
each  
■ Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
— Supports full chip erase  
■ Top or bottom boot block configurations  
■ Package Options  
available  
— 44-pin SO (mask-ROM compatible pinout)  
Publication# 22143 Rev: B Amendment/+6  
Issue Date: September 2, 1999  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Refer to AMD’s Website (www.amd.com) for the latest information.  
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与AM29PL160CB120KI相关器件

型号 品牌 获取价格 描述 数据表
AM29PL160CB-120KI SPANSION

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 		Flash, 1MX16, 120ns, PDSO44, REVERSE, MO-180AA, SOP-44
AM29PL160CB120SC SPANSION

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 		Flash, 2MX8, 120ns, PDSO44, SOP-44
AM29PL160CB120SD SPANSION

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 		Flash, 2MX8, 120ns, PDSO44, SOP-44
AM29PL160CB120SF SPANSION

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 		2MX8 FLASH 3V PROM, 120ns, PDSO44, MO-180AA, SOP-44
AM29PL160CB120SI SPANSION

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 		2MX8 FLASH 3V PROM, 120ns, PDSO44, MO-180AA, SOP-44
AM29PL160CB-120SI AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash
AM29PL160CB-120SKF SPANSION

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 		Flash, 1MX16, 120ns, PDSO44, REVERSE, MO-180AA, SOP-44
AM29PL160CB-120SKI AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash
AM29PL160CB-120SKI SPANSION

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 		Flash, 1MX16, 120ns, PDSO44, REVERSE, MO-180AA, SOP-44
AM29PL160CB60REC SPANSION

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 		Flash, 2MX8, 60ns, PDSO48, TSOP-48

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