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AM29PL160CB120SI PDF预览

AM29PL160CB120SI

更新时间: 2024-11-28 03:18:39
品牌 Logo 应用领域
飞索 - SPANSION 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
40页 768K
描述
2MX8 FLASH 3V PROM, 120ns, PDSO44, MO-180AA, SOP-44

AM29PL160CB120SI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:44Reach Compliance Code:compliant
风险等级:5.46最长访问时间:120 ns
其他特性:CONFIGURABLE AS 1M X 16备用内存宽度:16
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:44字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):240编程电压:3 V
认证状态:Not Qualified座面最大高度:2.8 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:13.3 mm
Base Number Matches:1

AM29PL160CB120SI 数据手册

 浏览型号AM29PL160CB120SI的Datasheet PDF文件第2页浏览型号AM29PL160CB120SI的Datasheet PDF文件第3页浏览型号AM29PL160CB120SI的Datasheet PDF文件第4页浏览型号AM29PL160CB120SI的Datasheet PDF文件第5页浏览型号AM29PL160CB120SI的Datasheet PDF文件第6页浏览型号AM29PL160CB120SI的Datasheet PDF文件第7页 
PRELIMINARY  
Am29PL160C  
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)  
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory  
DISTINCTIVE CHARACTERISTICS  
16 Mbit Page Mode device  
Sector Protection  
— Byte (8-bit) or word (16-bit) mode selectable via  
BYTE# pin  
— A hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
— Page size of 16 bytes/8 words: Fast page read  
access from random locations within the page  
— Sectors can be locked via programming  
equipment  
Single power supply operation  
Temporary Sector Unprotect command  
sequence allows code changes in previously  
locked sectors  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
Minimum 1 million write cycles guarantee  
per sector  
20-year data retention  
5 V-tolerant data, address, and control signals  
High performance read access times  
Manufactured on 0.32 µm process technology  
Software command-set compatible with JEDEC  
— Page access times as fast as 25 ns at industrial  
temperature range  
standard  
— Backward compatible with Am29F and Am29LV  
families  
— Random access times as fast as 65 ns  
Power consumption (typical values at 5 MHz)  
— 30 mA read current  
CFI (Common Flash Interface) compliant  
— Provides device-specific information to the  
system, allowing host software to easily  
reconfigure for different Flash devices  
— 20 mA program/erase current  
— 1 µA standby mode current  
Unlock Bypass Program Command  
— 1 µA Automatic Sleep mode current  
Flexible sector architecture  
— Reduces overall programming time when  
issuing multiple program command sequences  
— Sector sizes: One 16 Kbyte, two 8 Kbyte, one  
224 Kbyte, and seven sectors of 256 Kbytes  
each  
Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
— Supports full chip erase  
Top or bottom boot block configurations  
Package Options  
available  
— 44-pin SO (mask-ROM compatible pinout)  
Publication# 22143 Rev: B Amendment/+6  
Issue Date: September 2, 1999  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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AM29PL160CB-120SI AMD

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AM29PL160CB60RED SPANSION

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Flash, 2MX8, 60ns, PDSO44, SOP-44