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AM29LV116DB-90ED PDF预览

AM29LV116DB-90ED

更新时间: 2024-11-05 05:15:39
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
43页 759K
描述
16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

AM29LV116DB-90ED 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP, TSSOP40,.8,20Reach Compliance Code:unknown
风险等级:5.77最长访问时间:90 ns
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G40内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
部门数/规模:1,2,1,31端子数量:40
字数:2097152 words字数代码:2000000
最高工作温度:70 °C最低工作温度:
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP40,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
Base Number Matches:1

AM29LV116DB-90ED 数据手册

 浏览型号AM29LV116DB-90ED的Datasheet PDF文件第2页浏览型号AM29LV116DB-90ED的Datasheet PDF文件第3页浏览型号AM29LV116DB-90ED的Datasheet PDF文件第4页浏览型号AM29LV116DB-90ED的Datasheet PDF文件第5页浏览型号AM29LV116DB-90ED的Datasheet PDF文件第6页浏览型号AM29LV116DB-90ED的Datasheet PDF文件第7页 
Am29LV116D  
Data Sheet  
RETIRED  
PRODUCT  
This product has been retired and is not recommended for designs. For new designs, S29AL016D  
supersedes Am29LV116D. Please refer to the S29AL016D data sheet for specifications and ordering  
information. Availability of this document is retained for reference and historical purposes only.  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal data sheet improvement and are noted in the  
document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 21359 Revision E Amendment 5 Issue Date September 12,2006  

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