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AM29LV102BT-90FI PDF预览

AM29LV102BT-90FI

更新时间: 2024-11-09 05:15:39
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
7页 41K
描述
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory

AM29LV102BT-90FI 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:REVERSE, TSOP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.35
最长访问时间:90 nsJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

AM29LV102BT-90FI 数据手册

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ADVANCE INFORMATION  
Am29LV102B  
2 Megabit (256 K x 8-Bit)  
CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Unlock Bypass Program Command  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Reduces overall programming time when  
issuing multiple program command sequences  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
Embedded Algorithms  
— Embedded Erase algorithms automatically  
preprogram and erase the entire chip or any  
combination of designated sectors  
Manufactured on 0.35 µm process technology  
High performance  
— Embedded Program algorithms automatically  
writes and verifies data at specified addresses  
— Full voltage range: access times as fast as 70 ns  
— Regulated voltage range: access times as fast  
as 55 ns  
Minimum 1,000,000 write/erase cycles  
guaranteed  
Package option  
Ultra low power consumption  
— 32-pin PLCC  
— Automatic sleep mode: 1 µA (typical values at  
5 MHz)  
— 32-pin TSOP  
— Standby mode: 1 µA  
— Read mode: 7 mA  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
— Program/erase mode: 15 mA  
— Superior inadvertent write protection  
Flexible sector architecture  
Data# Polling and toggle bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
three 64 Kbyte sectors  
— Provides a software method of detecting  
program or erase cycle completion  
— Any combination of sectors can be erased;  
supports full chip erase  
Erase Suspend/Resume  
— Sector Protection features:  
— Supports reading data from or programming  
data to a sector not being erased  
Hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
Sectors can be locked via programming  
equipment  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice. 2/9/98  
Publication# 21259 Rev: A Amendment/0  
Issue Date: January 1998  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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AM29LV102BT-90FIB AMD

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2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
AM29LV102BT-90FK SPANSION

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2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
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AM29LV102BT-90JE AMD

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2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
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AM29LV102BT-90JEB AMD

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2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
AM29LV102BT-90JF SPANSION

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Flash, 256KX8, 90ns, PQCC32, PLASTIC, LCC-32