Datasheet > AM29LV040BB-120ECB

AM29LV040BB-120ECB

更新时间： 2024-11-03 23:04:19

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
7页	41K
描述
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

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ADVANCE INFORMATION

Am29LV040B

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when

issuing multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Embedded Algorithms

— Embedded Erase algorithms automatically

preprogram and erase the entire chip or any

combination of designated sectors

■ Manufactured on 0.35 µm process technology

■ High performance

— Embedded Program algorithms automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 70 ns

— Regulated voltage range: access times as fast

as 55 ns

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ Package option

■ Ultra low power consumption (typical values at

5 MHz)

— 32-pin PLCC

— Automatic sleep mode: 1 µA

— Standby mode: 1 µA

— 32-pin TSOP

■ Compatibility with JEDEC standards

— Read mode: 7 mA

— Pinout and software compatible with single-

power supply Flash

— Program/erase mode: 15 mA

— Superior inadvertent write protection

■ Flexible sector architecture

■ Data# Polling and toggle bits

— Eight 64 Kbyte sectors

— Provides a software method of detecting

program or erase cycle completion

— Any combination of sectors can be erased;

supports full chip erase

— Sector Protection features:

■ Erase Suspend/Resume

Hardware method of locking a sector to prevent

any program or erase operations within that

sector

— Supports reading data from or programming

data to a sector not being erased

Sectors can be locked via programming

equipment

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21354 Rev: A Amendment/+1

Issue Date: February 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7

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与AM29LV040BB-120ECB相关器件

型号	品牌	获取价格	描述	数据表
AM29LV040BB-120EE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120EEB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120EI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120EIB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120FC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120FCB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120FE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120FEB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120FI	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040BB-120FIB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

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