Datasheet > AM29LV040B-90FE

AM29LV040B-90FE

更新时间： 2024-11-03 23:29:39

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
35页	716K
描述
x8 Flash EEPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29LV040B-90FE 数据手册

Am29LV040B

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when issuing

multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Embedded Algorithms

— Embedded Erase algorithms automatically

preprogram and erase the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

■ High performance

— Embedded Program algorithms automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 70 ns

— Regulated voltage range: access times as fast as

60 ns

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ Ultra low power consumption (typical values at

5 MHz)

— Automatic sleep mode: 1 µA

— Standby mode: 1 µA

— 32-pin PLCC

— Read mode: 7 mA

— 32-pin TSOP

— Program/erase mode: 15 mA

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

■ Flexible sector architecture

— Eight 64 Kbyte sectors

— Superior inadvertent write protection

— Any combination of sectors can be erased;

supports full chip erase

■ Data# Polling and toggle bits

— Sector Protection features:

— Provides a software method of detecting program

or erase cycle completion

Hardware method of locking a sector to prevent

any program or erase operations within that sector

■ Erase Suspend/Resume

Sectors can be locked via programming

equipment

— Supports reading data from or programming data

to a sector not being erased

This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may

be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21354 Rev: D Amendment/+1

Issue Date: November 13, 2000

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM29LV040B-90FE相关器件

型号	品牌	获取价格	描述	数据表
AM29LV040B-90FEB	SPANSION	获取价格	Flash, 512KX8, 90ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-90FFB	SPANSION	获取价格	Flash, 512KX8, 90ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-90FI	ETC	获取价格	x8 Flash EEPROM
AM29LV040B-90FIB	SPANSION	获取价格	Flash, 512KX8, 90ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-90FKB	SPANSION	获取价格	Flash, 512KX8, 90ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29LV040B-90JC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-90JCB	SPANSION	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
AM29LV040B-90JD	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory
AM29LV040B-90JDB	SPANSION	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
AM29LV040B-90JE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory

与AM29LV040B-90FE相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

34
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29LV040B-90FE

AM29LV040B-90FE 数据手册

与AM29LV040B-90FE相关器件

与AM29LV040B-90FE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29LV040B-90FE

AM29LV040B-90FE 数据手册

与AM29LV040B-90FE相关器件

与AM29LV040B-90FE相关文章

您还可以找

您在本页遇到什么问题？