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AM29LV008BB-120EK PDF预览

AM29LV008BB-120EK

更新时间： 2024-02-05 06:35:14
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
41页 720K
描述
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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中文翻译

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AM29LV008BB-120EK 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：TSSOP, TSSOP40,.8,20Reach Compliance Code：unknown
风险等级：5.92Is Samacsys：N
最长访问时间：120 ns启动块：BOTTOM
命令用户界面：YES数据轮询：YES
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G40
JESD-609代码：e0内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：8
部门数/规模：1,2,1,15端子数量：40
字数：1048576 words字数代码：1000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP40,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL电源：3/3.3 V
就绪/忙碌：YES反向引出线：YES
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPEBase Number Matches：1

AM29LV008BB-120EK 数据手册

 浏览型号AM29LV008BB-120EK的Datasheet PDF文件第1页浏览型号AM29LV008BB-120EK的Datasheet PDF文件第2页浏览型号AM29LV008BB-120EK的Datasheet PDF文件第3页浏览型号AM29LV008BB-120EK的Datasheet PDF文件第5页浏览型号AM29LV008BB-120EK的Datasheet PDF文件第6页浏览型号AM29LV008BB-120EK的Datasheet PDF文件第7页 
D A T A S H E E T  
GENERAL DESCRIPTION  
The Am29LV008B is an 8 Mbit, 3.0 volt-only Flash  
memory organized as 1,048,576 bytes. The device is  
offered in a 40-pin TSOP package. The byte-wide (x8)  
data appears on DQ7–DQ0. This device requires only a  
single, 3.0 volt VCC supply to perform read, program,  
and erase operations. A standard EPROM programmer  
can also be used to program and erase the device.  
programmed) before executing the erase operation.  
During erase, the device automatically times the erase  
pulse widths and verifies proper cell margin.  
The host system can detect whether a program or  
erase operation is complete by observing the RY/BY#  
pin, or by reading the DQ7 (Data# Polling) and DQ6  
(toggle) status bits. After a program or erase cycle has  
been completed, the device is ready to read array data  
or accept another command.  
This device is manufactured using AMD’s 0.32 µm  
process technology, and offers all the features and ben-  
efits of the Am29LV008, which was manufactured using  
0.5 µm process technology. In addition, the  
Am29LV008B features unlock bypass programming  
and in-system sector protection/unprotection.  
The sector erase architecture allows memory sectors  
to be erased and reprogrammed without affecting the  
data contents of other sectors. The device is fully  
erased when shipped from the factory.  
The standard device offers access times of 70, 90, and  
120 ns, allowing high speed microprocessors to  
operate without wait states. To eliminate bus contention  
the device has separate chip enable (CE#), write  
enable (WE#) and output enable (OE#) controls.  
Hardware data protection measures include a low  
V
detector that automatically inhibits write opera-  
CC  
tions during power transitions. The hardware sector  
protection feature disables both program and erase  
operations in any combination of the sectors of  
memory. This can be achieved in-system or via pro-  
gramming equipment.  
The device requires only a single 3.0 volt power  
supply for both read and write functions. Internally  
generated and regulated voltages are provided for the  
program and erase operations.  
The Erase Suspend feature enables the user to put  
erase on hold for any period of time to read data from,  
or program data to, any sector that is not selected for  
erasure. True background erase can thus be achieved.  
The device is entirely command set compatible with the  
JEDEC single-power-supply Flash standard. Com-  
mands are written to the command register using  
standard microprocessor write timings. Register con-  
tents serve as input to an internal state-machine that  
controls the erase and programming circuitry. Write  
cycles also internally latch addresses and data needed  
for the programming and erase operations. Reading  
data out of the device is similar to reading from other  
Flash or EPROM devices.  
The hardware RESET# pin terminates any operation  
in progress and resets the internal state machine to  
reading array data. The RESET# pin may be tied to the  
system reset circuitry. A system reset would thus also  
reset the device, enabling the system microprocessor  
to read the boot-up firmware from the Flash memory.  
The device offers two power-saving features. When  
addresses have been stable for a specified amount of  
time, the device enters the automatic sleep mode.  
The system can also place the device into the standby  
mode. Power consumption is greatly reduced in both  
these modes.  
Device programming occurs by executing the program  
command sequence. This initiates the Embedded  
Program algorithm—an internal algorithm that auto-  
matically times the program pulse widths and verifies  
proper cell margin. The Unlock Bypass mode facili-  
tates faster programming times by requiring only two  
write cycles to program data instead of four.  
AMD’s Flash technology combines years of Flash  
memory manufacturing experience to produce the  
highest levels of quality, reliability and cost effectiveness.  
The device electrically erases all bits within a sector  
simultaneously via Fowler-Nordheim tunneling. The  
data is programmed using hot electron injection.  
Device erasure occurs by executing the erase  
command sequence. This initiates the Embedded  
Erase algorithm—an internal algorithm that automati-  
cally preprograms the array (if it is not already  
4
Am29LV008B  
21524D6 October 11, 2006  
1234567...41

中文翻译

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AM29LV008BB-120FCB AMD

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AM29LV008BB-120FE AMD

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 		8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-120FEB AMD

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 		8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB120FI ETC

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 		x8 Flash EEPROM
AM29LV008BB-120FI AMD

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 		8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-120FI SPANSION

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 		Flash, 1MX8, 90ns, PDSO40, REVERSE, MO-142BCD, TSOP-40
AM29LV008BB-120FIB AMD

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 		8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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