Datasheet > AM29LV008BB70RFCB

AM29LV008BB70RFCB

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
38页	462K
描述
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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PRELIMINARY

Am29LV008B

8 Megabit (1 M x 8-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Unlock Bypass Program Command

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Reduces overall programming time when

issuing multiple program command sequences

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

■ Manufactured on 0.35 µm process technology

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Compatible with 0.5 µm Am29LV008 device

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast

as 70 ns

■ Minimum 1,000,000 write cycle guarantee per

sector

■ Ultra low power consumption (typical values at

■ Package option

5 MHz)

— 40-pin TSOP

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— 15 mA program/erase current

— Superior inadvertent write protection

■ Flexible sector architecture

■ Data# Polling and toggle bits

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors

— Provides a software method of detecting

program or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

Sectors can be locked in-system or via

programming equipment

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21524 Rev: B Amendment/+1

Issue Date: March 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

12 3 4 5 6 7...38

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与AM29LV008BB70RFCB相关器件

型号	品牌	描述	获取价格	数据表
AM29LV008BB-70RFCB	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB70RFE	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB-70RFE	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB70RFEB	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB-70RFEB	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB70RFI	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格

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