Datasheet > AM29LV008BB120FI

AM29LV008BB120FI

更新时间： 2022-01-18 17:30:00

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
40页	720K
描述
x8 Flash EEPROM

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AM29LV008BB120FI 数据手册

Am29LV008B

8 Megabit (1 M x 8-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Top or bottom boot block configurations

available

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

■ Embedded Algorithms

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— Compatible with 0.5 µm Am29LV008 device

■ Minimum 1,000,000 write cycle guarantee per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ High performance

— Full voltage range: access times as fast as 90 ns

— Regulated voltage range: access times as fast as

70 ns

— 40-pin TSOP

■ Ultra low power consumption (typical values at 5

MHz)

■ Compatibility with JEDEC standards

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

— 15 mA program/erase current

■ Data# Polling and toggle bits

■ Flexible sector architecture

— Provides a software method of detecting program

or erase operation completion

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors

■ Ready/Busy# pin (RY/BY#)

— Supports full chip erase

— Provides a hardware method of detecting

program or erase cycle completion

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Sectors can be locked in-system or via

programming equipment

■ Hardware reset pin (RESET#)

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

— Hardware method to reset the device to reading

array data

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21524 Rev: D Amendment/+1

Issue Date: August 14, 2000

12 3 4 5 6 7...40

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与AM29LV008BB120FI相关器件

型号	品牌	获取价格	描述	数据表
AM29LV008BB-120FI	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-120FI	SPANSION	获取价格	Flash, 1MX8, 90ns, PDSO40, REVERSE, MO-142BCD, TSOP-40
AM29LV008BB-120FIB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB70REC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-70REC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB70RECB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-70RECB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-70RED	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB70REE	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV008BB-70REE	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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