Datasheet > AM29LV008BB-120EI

AM29LV008BB-120EI

更新时间： 2024-01-13 21:37:40

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
38页	462K
描述
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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技术参数
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AM29LV008BB-120EI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	TSSOP, TSSOP40,.8,20	Reach Compliance Code：	unknown
风险等级：	5.92	Is Samacsys：	N
最长访问时间：	120 ns	启动块：	BOTTOM
命令用户界面：	YES	数据轮询：	YES
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G40
JESD-609代码：	e0	内存密度：	8388608 bit
内存集成电路类型：	FLASH	内存宽度：	8
部门数/规模：	1,2,1,15	端子数量：	40
字数：	1048576 words	字数代码：	1000000
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP40,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	PARALLEL	电源：	3/3.3 V
就绪/忙碌：	YES	反向引出线：	YES
部门规模：	16K,8K,32K,64K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	切换位：	YES
类型：	NOR TYPE	Base Number Matches：	1

AM29LV008BB-120EI 数据手册

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P R E L I M I N A R Y

GENERAL DESCRIPTION

The Am29LV008B is an 8 Mbit, 3.0 volt-only Flash

memory organized as 1,048,576 bytes. The device is

offered in a 40-pin TSOP package. The byte-wide (x8)

data appears on DQ7–DQ0. This device requires only

a single, 3.0 volt V_CCsupply to perform read, program,

and erase operations. A standard EPROM pro-

grammer can also be used to program and erase the

device.

executing the erase operation. During erase, the device

automatically times the erase pulse widths and verifies

proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle

has been completed, the device is ready to read array

data or accept another command.

This device is manufactured using AMD’s 0.35 µm

process technology, and offers all the features and

benefits of the Am29LV008, which was manufactured

using 0.5 µm process technology. In addition, the

Am29LV008B features unlock bypass programming

and in-system sector protection/unprotection.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low

The standard device offers access times of 70, 80, 90,

and 120 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion the device has separate chip enable (CE#), write

enable (WE#) and output enable (OE#) controls.

detector that automatically inhibits write opera-

V_CC

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved in-system or via program-

ming equipment.

The device requires only a single 3.0 volt power sup-

ply for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state-machine that

controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed

for the programming and erase operations. Reading

data out of the device is similar to reading from other

Flash or EPROM devices.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the standby

mode. Power consumption is greatly reduced in both

these modes.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facili-

tates faster programming times by requiring only two

write cycles to program data instead of four.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within

a sector simultaneously via Fowler-Nordheim tun-

neling. The data is programmed using hot electron

injection.

Device erasure occurs by executing the erase command

sequence. This initiates the Embedded Erase algo-

rithm—an internal algorithm that automatically prepro-

grams the array (if it is not already programmed) before

Am29LV008B

123 4 5 6 7...38

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与AM29LV008BB-120EI相关器件

型号	品牌	描述	获取价格	数据表
AM29LV008BB-120EIB	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB-120EK	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB120FC	ETC	x8 Flash EEPROM	获取价格
AM29LV008BB-120FC	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB-120FCB	AMD	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
AM29LV008BB120FE	ETC	x8 Flash EEPROM	获取价格

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