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AM29F800T-90EC

更新时间： 2024-11-10 05:26:39
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
41页 249K
描述
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

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中文翻译

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AM29F800T-90EC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP-48
针数：48Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.55最长访问时间：90 ns
其他特性：100K WRITE/ERASE CYCLES MIN备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：8388608 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：1,2,1,15
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：512KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
编程电压：5 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K,8K,32K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：YES
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

AM29F800T-90EC 数据手册

 浏览型号AM29F800T-90EC的Datasheet PDF文件第2页浏览型号AM29F800T-90EC的Datasheet PDF文件第3页浏览型号AM29F800T-90EC的Datasheet PDF文件第4页浏览型号AM29F800T-90EC的Datasheet PDF文件第5页浏览型号AM29F800T-90EC的Datasheet PDF文件第6页浏览型号AM29F800T-90EC的Datasheet PDF文件第7页 
PRELIMINARY  
Am29F800T/Am29F800B  
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS  
5.0 Volt-only, Sector Erase Flash Memory  
DISTINCTIVE CHARACTERISTICS  
■ 5.0 V ± 10% for read and write operations  
— Minimizes system level power requirements  
■ Compatible with JEDEC standards  
■ Embedded Program Algorithm  
— Automatically programs and verifies data at  
specified address  
— Pinout and software compatible with  
single-power-supply flash  
■ Data Polling and Toggle Bit feature for detection  
of program or erase cycle completion  
— Superior inadvertent write protection  
■ Ready/Busy output (RY/BY)  
— Hardware method for detection of program or  
erase cycle completion  
■ Package options  
— 44-pin SO  
■ Erase Suspend/Resume  
— 48-pin TSOP  
— Supports reading data from or programming  
data to a sector not being erased  
■ Minimum 100,000 write/erase cycles guaranteed  
■ High performance  
■ Low power consumption  
— 70 ns maximum access time  
— 20 mA typical active read current for Byte Mode  
— 28 mA typical active read current for Word Mode  
— 30 mA typical program/erase current  
■ Sector erase architecture  
— One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and  
fifteen 64 Kbytes  
■ Enhanced power management for standby  
— Any combination of sectors can be erased. Also  
supports full chip erase.  
mode  
— 1 µA typical standby current  
■ Sector protection  
■ Boot Code Sector Architecture  
— T = Top sector  
— Hardware method that disables any combination  
of sectors from write or erase operations.  
Implemented using standard PROM  
programming equipment.  
— B = Bottom sector  
■ Hardware RESET pin  
■ Embedded Erase Algorithm  
— Resets internal state machine to the read mode  
— Automatically pre-programs and erases the chip  
or any sector  
GENERAL DESCRIPTION  
The Am29F800 is an 8 Mbit, 5.0 Volt-only Flash mem-  
ory organized as 1 Mbyte of 8 bits each or 512K words  
of 16 bits each. For flexible erase capability, the 8 Mbits  
of data are divided into 19 sectors as follows: one 16  
Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte.  
Eight bits of data appear on DQ0–DQ7 in byte mode; in  
word mode 16 bits appear on DQ0–DQ15. The  
Am29F800 is offered in 44-pin SO and 48-pin TSOP  
packages. This device is designed to be programmed  
in-system with the standard system 5.0 Volt VCC sup-  
ply. A VPP of 12.0 volts is not required for program or  
erase operations. The device can also be programmed  
in standard EPROM programmers.  
The standard Am29F800 offers access times of 70 ns, 90  
ns, 120 ns, and 150 ns, allowing high-speed micropro-  
cessors to operate without wait states. To eliminate bus  
contention, the device has separate chip enable (CE),  
write enable (WE), and output enable (OE) controls.  
The Am29F800 is entirely command set compatible  
with the JEDEC single-power-supply Flash standard.  
Commands are written to the command register using  
standard microprocessor write timings. Register con-  
tents serve as input to an internal state-machine which  
controls the erase and program circuitry. Write cycles  
also internally latch addresses and data needed for the  
programming and erase operations. Reading data out  
8/18/97  
Publication# 20375 Rev: C Amendment/+1  
Issue Date: August 1997  
1234567...41

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AM29F800T-90EC 替代型号

型号 品牌 替代类型 描述 数据表
AM29F800BT-90EI AMD

功能相似

 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-90EC AMD

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 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
MBM29F800TA-90PFTN FUJITSU

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 8M (1M X 8/512K X 16) BIT

与AM29F800T-90EC相关器件

型号 品牌 获取价格 描述 数据表
AM29F800T-90ECB AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo
AM29F800T-90EE AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo
AM29F800T-90EE SPANSION

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 		Flash, 512KX16, 90ns, PDSO48, TSOP-48
AM29F800T-90EEB AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo
AM29F800T-90EEB SPANSION

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 		Flash, 512KX16, 90ns, PDSO48, TSOP-48
AM29F800T-90EI AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo
AM29F800T-90EI SPANSION

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 		Flash, 512KX16, 90ns, PDSO48, TSOP-48
AM29F800T-90EIB AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo
AM29F800T-90FC AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo
AM29F800T-90FCB AMD

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 		8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memo

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