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AM29F800BT-55WBI PDF预览

AM29F800BT-55WBI

更新时间: 2024-11-20 05:29:19
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
44页 1486K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

AM29F800BT-55WBI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,32
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.4最长访问时间:55 ns
其他特性:MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:YES数据保留时间-最小值:20
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:9 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

AM29F800BT-55WBI 数据手册

 浏览型号AM29F800BT-55WBI的Datasheet PDF文件第2页浏览型号AM29F800BT-55WBI的Datasheet PDF文件第3页浏览型号AM29F800BT-55WBI的Datasheet PDF文件第4页浏览型号AM29F800BT-55WBI的Datasheet PDF文件第5页浏览型号AM29F800BT-55WBI的Datasheet PDF文件第6页浏览型号AM29F800BT-55WBI的Datasheet PDF文件第7页 
Am29F800B  
Data Sheet  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal data sheet improvement and are noted in the  
document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 21504 Revision E Amendment 5 Issue Date November 2, 2006  

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