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AM29F800BT-150WBC PDF预览

AM29F800BT-150WBC

更新时间: 2024-11-19 23:29:39
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其他 - ETC 闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
43页 1029K
描述
x8/x16 Flash EEPROM

AM29F800BT-150WBC 数据手册

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Am29F800B  
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 Volt-only operation for read, erase, and  
program operations  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Minimizes system level requirements  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
Manufactured on 0.32 µm process technology  
— Compatible with 0.5 µm Am29F800 device  
Minimum 1,000,000 program/erase cycles per  
High performance  
sector guaranteed  
— Access times as fast as 55 ns  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package option  
Low power consumption (typical values at  
5 MHz)  
— 1 µA standby mode current  
— 48-pin TSOP  
— 20 mA read current (byte mode)  
— 28 mA read current (word mode)  
— 30 mA program/erase current  
— 44-pin SO  
— 48-ball FBGA  
— Known Good Die (KGD)  
(see publication number 21631)  
Flexible sector architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
fifteen 64 Kbyte sectors (byte mode)  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power-supply Flash  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
fifteen 32 Kword sectors (word mode)  
— Superior inadvertent write protection  
— Supports full chip erase  
Data# Polling and toggle bits  
— Sector Protection features:  
— Provides a software method of detecting  
program or erase operation completion  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
Ready/Busy# pin (RY/BY#)  
— Provides a hardware method of detecting  
program or erase cycle completion  
— Sectors can be locked via programming  
equipment  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Top or bottom boot block configurations  
available  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
Publication# 21504 Rev: E Amendment/+1  
Issue Date: August 4, 2000  
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  

与AM29F800BT-150WBC相关器件

型号 品牌 获取价格 描述 数据表
AM29F800BT-150WBD SPANSION

获取价格

Flash, 512KX16, 150ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29F800BT-150WBE ETC

获取价格

x8/x16 Flash EEPROM
AM29F800BT-150WBF SPANSION

获取价格

Flash, 512KX16, 150ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29F800BT-150WBI ETC

获取价格

x8/x16 Flash EEPROM
AM29F800BT-150WBK SPANSION

获取价格

Flash, 512KX16, 150ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29F800BT-55 SPANSION

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EC AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55ECB AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55ED AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EE SPANSION

获取价格

Flash, 512KX16, 55ns, PDSO48, MO-142DD, TSOP-48