Datasheet > AM29F800BT-150WBI

AM29F800BT-150WBI

更新时间： 2024-11-19 23:29:39

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
43页	1029K
描述
x8/x16 Flash EEPROM

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Am29F800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 Volt-only operation for read, erase, and

program operations

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Minimizes system level requirements

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F800 device

■ Minimum 1,000,000 program/erase cycles per

■ High performance

sector guaranteed

— Access times as fast as 55 ns

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ Low power consumption (typical values at

5 MHz)

— 1 µA standby mode current

— 48-pin TSOP

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

— 44-pin SO

— 48-ball FBGA

— Known Good Die (KGD)

(see publication number 21631)

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power-supply Flash

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Superior inadvertent write protection

— Supports full chip erase

■ Data# Polling and toggle bits

— Sector Protection features:

— Provides a software method of detecting

program or erase operation completion

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

— Sectors can be locked via programming

equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Top or bottom boot block configurations

available

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Publication# 21504 Rev: E Amendment/+1

Issue Date: August 4, 2000

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

12 3 4 5 6 7...43

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与AM29F800BT-150WBI相关器件

型号	品牌	获取价格	描述	数据表
AM29F800BT-150WBK	SPANSION	获取价格	Flash, 512KX16, 150ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29F800BT-55	SPANSION	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EC	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55ECB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55ED	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EE	SPANSION	获取价格	Flash, 512KX16, 55ns, PDSO48, MO-142DD, TSOP-48
AM29F800BT-55EE	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EEB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EF	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F800BT-55EF	SPANSION	获取价格	Flash, 512KX16, 55ns, PDSO48, LEAD FREE, MO-142DD, TSOP-48

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