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AM29F200BT-45EI PDF预览

AM29F200BT-45EI

更新时间: 2024-11-06 20:18:27
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
41页 818K
描述
Flash, 128KX16, 45ns, PDSO48, MO-142DD, TSOP-48

AM29F200BT-45EI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSSOP, TSSOP48,.8,20针数:48
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.67
Is Samacsys:N最长访问时间:45 ns
其他特性:MIN 1000K WRITE/ERASE CYCLE ;20 YEAR DATA RETENTION; TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:YES数据保留时间-最小值:20
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:1,2,1,3
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

AM29F200BT-45EI 数据手册

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Am29F200B  
Data Sheet (Retired Product)  
Am29F200B Cover Sheet  
This product has been retired and is not recommended for designs. Please contact your Spansion representative for  
alternates. Availability of this document is retained for reference and historical purposes only.  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been  
made are the result of normal data sheet improvement and are noted in the document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 21526  
Revision D  
Amendment 5  
Issue Date March 3, 2009  

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