Datasheet > AM29F200AB-120DGC

AM29F200AB-120DGC

更新时间： 2024-11-07 22:06:59

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
8页	120K
描述
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1

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SUPPLEMENT

Am29F200A Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

■ Top or bottom boot block configurations

available

— Minimizes system level power requirements

■ Embedded Algorithms

■ High performance

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— 90 or 120 ns access time

■ Low power consumption

— 20 mA typical active read current (byte mode)

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— 28 mA typical active read current for

(word mode)

■ Minimum 100,000 write/erase cycles guaranteed

■ Compatible with JEDEC standards

— 30 mA typical program/erase current

— 1 µA typical standby current

— Pinout and software compatible with

single-power-supply flash

■ Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

■ Data# Polling and Toggle Bit

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Supports full chip erase

— Hardware method for detection of program or

erase cycle completion

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

■ Erase Suspend/Resume

— Supports reading data from a sector not being

erased

Sectors can be locked via programming

equipment

■ Hardware RESET# pin

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

— Resets internal state machine to the reading

array data

■ Tested to datasheet specifications at

temperature

■ Quality and reliability levels equivalent to

standard packaged components

Publication# 21257 Rev: B Amendment/0

Issue Date: December 1997

1/13/98

12 3 4 5 6 7 8

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与AM29F200AB-120DGC相关器件

型号	品牌	获取价格	描述	数据表
AM29F200AB-120DGC1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-120DGC1	SPANSION	获取价格	Flash, 256KX8, 120ns
AM29F200AB-120DGD1	SPANSION	获取价格	Flash, 256KX8, 120ns
AM29F200AB-120DGE	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-120DGE1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-120DGF1	SPANSION	获取价格	Flash, 256KX8, 120ns
AM29F200AB-120DGI	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-120DGI1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200AB-120DGI1	SPANSION	获取价格	Flash, 256KX8, 120ns
AM29F200AB-120DPC	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev

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