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AM29F040B-55FIB PDF预览

AM29F040B-55FIB

更新时间: 2024-11-25 22:18:11
品牌 Logo 应用领域
超微 - AMD 内存集成电路光电二极管
页数 文件大小 规格书
30页 372K
描述
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F040B-55FIB 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:TSOP1-R,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.19
Is Samacsys:N最长访问时间:55 ns
其他特性:1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS数据保留时间-最小值:20
JESD-30 代码:R-PDSO-G32长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

AM29F040B-55FIB 数据手册

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PRELIMINARY  
Am29F040B  
4 Megabit (512 K x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
Distinctive Characteristics  
5.0 V ± 10% for read and write operations  
Embedded Algorithms  
— Minimizes system level power requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.35 µm process technology  
— Compatible with 0.5 µm Am29F040 device  
— Embedded Program algorithm automatically  
writes and verifies bytes at specified addresses  
High performance  
— Access times as fast as 55 ns  
Minimum 1,000,000 program/erase cycles per  
sector guaranteed  
Low power consumption  
Package options  
— 20 mA typical active read current  
— 30 mA typical program/erase current  
— 32-pin PLCC, TSOP, or PDIP  
— 1 µA typical standby current (standard access  
time to active mode)  
Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply Flash standard  
Flexible sector architecture  
— 8 uniform sectors of 64 Kbytes each  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Superior inadvertent write protection  
Data# Polling and toggle bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection:  
A hardware method of locking sectors to prevent  
any program or erase operations within that  
sector  
Erase Suspend/Erase Resume  
— Suspends a sector erase operation to read data  
from, or program data to, a non-erasing sector,  
then resumes the erase operation  
Publication# 21445 Rev: B Amendment/+2  
Issue Date: April 1998  

与AM29F040B-55FIB相关器件

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AM29F040B-55FKB SPANSION

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Flash, 512KX8, 55ns, PDSO32, REVERSE, TSOP-32
AM29F040B-55JC AMD

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4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-55JCB AMD

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4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-55JD AMD

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4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-55JDB SPANSION

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Flash, 512KX8, 55ns, PQCC32, PLASTIC, LCC-32
AM29F040B-55JE AMD

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4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-55JE SPANSION

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Flash, 512KX8, 55ns, PQCC32, PLASTIC, MO-052AE, LCC-32
AM29F040B-55JEB AMD

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4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-55JF AMD

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4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-55JF SPANSION

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Flash, 512KX8, 55ns, PQCC32, LEAD FREE, PLASTIC, MO-052AE, LCC-32