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AM29F017D-120EE PDF预览

AM29F017D-120EE

更新时间: 2024-11-03 05:15:27
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
41页 801K
描述
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F017D-120EE 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP1包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.45最长访问时间:120 ns
其他特性:MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION命令用户界面:YES
通用闪存接口:YES数据轮询:YES
数据保留时间-最小值:20JESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:32端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.00002 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AM29F017D-120EE 数据手册

 浏览型号AM29F017D-120EE的Datasheet PDF文件第2页浏览型号AM29F017D-120EE的Datasheet PDF文件第3页浏览型号AM29F017D-120EE的Datasheet PDF文件第4页浏览型号AM29F017D-120EE的Datasheet PDF文件第5页浏览型号AM29F017D-120EE的Datasheet PDF文件第6页浏览型号AM29F017D-120EE的Datasheet PDF文件第7页 
Am29F017D  
Data Sheet  
RETIRED  
PRODUCT  
This product has been retired and is not recommended for designs. Please contact your Spansion  
representative for alternates. Availability of this document is retained for reference and historical  
purposes only.  
The following document contains information on Spansion memory products.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any  
changes that have been made are the result of normal data sheet improvement and are noted in the  
document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number 21195 Revision E Amendment 6 Issue Date September 12, 2006  

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