Datasheet > AM29F016B-90SC

AM29F016B-90SC

更新时间： 2024-11-01 23:29:31

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
40页	1030K
描述
x8 Flash EEPROM

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AM29F016B-90SC 数据手册

Am29F016B

16 Megabit (2 M x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10%, single power supply operation

— Minimizes system level power requirements

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F016 device

■ High performance

— 48-pin and 40-pin TSOP

— 44-pin SO

— Access times as fast as 70 ns

■ Low power consumption

— Known Good Die (KGD)

— 25 mA typical active read current

— 30 mA typical program/erase current

(see publication number 21551)

■ Compatible with JEDEC standards

— 1 µA typical standby current (standard access

— Pinout and software compatible with

time to active mode)

single-power-supply Flash standard

■ Flexible sector architecture

— 32 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased

— Supports full chip erase

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase cycle completion

— Group sector protection:

■ Ready/Busy# output (RY/BY#)

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

— Provides a hardware method for detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Hardware reset pin (RESET#)

— Resets internal state machine to the read mode

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21444 Rev: D Amendment/0

Issue Date: November 16, 1999

12 3 4 5 6 7...40

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与AM29F016B-90SC相关器件

型号	品牌	获取价格	描述	数据表
AM29F016B-90SE	ETC	获取价格	x8 Flash EEPROM
AM29F016B-90SEB	ETC	获取价格	EEPROM
AM29F016B-90SI	ETC	获取价格	x8 Flash EEPROM
AM29F016D	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016D_02	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016D_06	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016D_09	SPANSION	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F016D-120DGC1	AMD	获取价格	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016D-120DGC1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-38
AM29F016D-120DGD1	SPANSION	获取价格	Flash, 2MX8, 120ns, DIE-38

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