生命周期: | Obsolete | 包装说明: | DIE, |
Reach Compliance Code: | unknown | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.7 |
最长访问时间: | 120 ns | 其他特性: | MINIMUM 100K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION |
数据保留时间-最小值: | 20 | JESD-30 代码: | X-XUUC-N30 |
内存密度: | 1048576 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 30 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
封装主体材料: | UNSPECIFIED | 封装代码: | DIE |
封装形状: | UNSPECIFIED | 封装形式: | UNCASED CHIP |
并行/串行: | PARALLEL | 编程电压: | 5 V |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | NO LEAD |
端子位置: | UPPER | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AM29F010-120DWI1 | AMD |
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1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 | |
AM29F010-120EC | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120ECB | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120EE | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120EEB | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120EI | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120EIB | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120FC | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120FCB | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory | |
AM29F010-120FE | AMD |
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1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |