Datasheet > AM29F010-1

AM29F010-1

更新时间： 2024-11-04 23:00:31

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
8页	59K
描述
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1

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数据手册

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AM29F010-1 数据手册

SUPPLEMENT

Am29F010 Known Good Die

1 Megabit (128 K x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1

■ Embedded Algorithms

DISTINCTIVE CHARACTERISTICS

— Embedded Erase algorithm automatically

pre-programs and erases the chip or any

combination of designated sector

■ Single power supply operation

— 5.0 V ± 10% for read, erase, and program

operations

— Embedded Program algorithm automatically

programs and verifies data at specified address

— Simplifies system-level power requirements

■ High performance

■ Minimum 100,000 program/erase cycles

— 90 or 120 ns maximum access time

guaranteed

■ Low power consumption

■ Compatible with JEDEC standards

— 30 mA max active read current

— 50 mA max program/erase current

— <25 µA typical standby current

— Pinout and software compatible with

single-power-supply flash

— Superior inadvertent write protection

■ Flexible sector architecture

— Eight uniform sectors

■ Data Polling and Toggle Bits

— Provides a software method of detecting

program or erase cycle completion

— Any combination of sectors can be erased

— Supports full chip erase

■ Tested to datasheet specifications at

temperature

■ Sector protection

■ Quality and reliability levels equivalent to

— Hardware-based feature that disables/re-

enables program and erase operations in any

combination of sectors

standard packaged components

— Sector protection/unprotection can be

implemented using standard PROM

programming equipment

1/13/98

Publication# 21116 Rev: B Amendment/0

Issue Date: January 1998

12 3 4 5 6 7 8

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