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AM29F002NT-120JE PDF预览

AM29F002NT-120JE

更新时间: 2024-11-03 22:12:23
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
37页 410K
描述
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory

AM29F002NT-120JE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:PLASTIC, LCC-32
针数:32Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.91最长访问时间:120 ns
其他特性:TOP BOOT BLOCK启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,3
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
部门规模:16K,8K,32K,64K最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE

AM29F002NT-120JE 数据手册

 浏览型号AM29F002NT-120JE的Datasheet PDF文件第2页浏览型号AM29F002NT-120JE的Datasheet PDF文件第3页浏览型号AM29F002NT-120JE的Datasheet PDF文件第4页浏览型号AM29F002NT-120JE的Datasheet PDF文件第5页浏览型号AM29F002NT-120JE的Datasheet PDF文件第6页浏览型号AM29F002NT-120JE的Datasheet PDF文件第7页 
PRELIMINARY  
Am29F002/Am29F002N  
2 Megabit (256 K x 8-Bit)  
CMOS 5.0 Volt-only Boot Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Top or bottom boot block configurations  
available  
— 5.0 Volt-only operation for read, erase, and  
program operations  
Embedded Algorithms  
— Minimizes system level requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
High performance  
— Access times as fast as 55 ns  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
Low power consumption (typical values at 5  
MHz)  
Minimum 100,000 write cycle guarantee per  
— 1 µA standby mode current  
— 20 mA read current  
sector  
Package option  
— 32-pin PDIP  
— 32-pin TSOP  
— 32-pin PLCC  
— 30 mA program/erase current  
Flexible sector architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
three 64 Kbyte sectors  
Compatibility with JEDEC standards  
— Supports full chip erase  
— Pinout and software compatible with single-  
power supply Flash  
— Sector Protection features:  
A hardware method of locking a sector to  
prevent any program or erase operations within  
that sector  
— Superior inadvertent write protection  
Data# Polling and toggle bits  
Sectors can be locked via programming  
equipment  
— Provides a software method of detecting  
program or erase operation completion  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Erase Suspend/Erase Resume  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data (not available on Am29F002N)  
Publication# 20818 Rev: C Amendment/+2  
Issue Date: March 1998  

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