Datasheet > AM29DL163DT70RZD

AM29DL163DT70RZD

更新时间： 2024-11-13 15:44:35

品牌	Logo	应用领域
飞索 - SPANSION		光电二极管内存集成电路
页数	文件大小	规格书
51页	1064K
描述
Flash, 2MX8, 70ns, PDSO56, MO-180BA, SSOP-56

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AM29DL163DT70RZD 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	MO-180BA, SSOP-56
针数：	56	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.56	最长访问时间：	70 ns
备用内存宽度：	16	启动块：	TOP
JESD-30 代码：	R-PDSO-G56	JESD-609代码：	e3
长度：	23.7 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	56	字数：	2097152 words
字数代码：	2000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	2MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	SSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, SHRINK PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	编程电压：	3 V
认证状态：	Not Qualified	座面最大高度：	2 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	MATTE TIN	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	类型：	NOR TYPE
宽度：	13.3 mm	Base Number Matches：	1

AM29DL163DT70RZD 数据手册

ADVANCE INFORMATION

Am29DL163D/Am29DL164D

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Minimum 1 million write cycles guaranteed per sector

■ Simultaneous Read/Write operations

■ 20 Year data retention at 125°C

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Reliable operation for the life of the system

SOFTWARE FEATURES

— Zero latency between read and write operations

■ Data Management Software (DMS)

■ Multiple bank architectures

— AMD-supplied software manages data programming

and erasing, enabling EEPROM emulation

— Three devices available with different bank sizes (refer

to Table 2)

— Eases sector erase limitations

■ Secured Silicon (SecSi) Sector: Extra 64 KByte sector

■ Supports Common Flash Memory Interface (CFI)

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

■ Any combination of sectors can be erased

■ Package options

— 48-ball FBGA

— 56-pin SSOP

— 48-pin TSOP

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

■ Top or bottom boot block

— Hardware method of resetting the internal state

machine to reading array data

■ Manufactured on 0.23 µm process technology

— Compatible with Am29DL16xC devices

■ Compatible with JEDEC standards

■ WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

— Pinout and software compatible with

single-power-supply flash standard

— Acceleration (ACC) function accelerates program

timing

PERFORMANCE CHARACTERISTICS

■ Sector protection

■ High performance

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Access time as fast 70 ns

— Program time: 7 µs/word typical utilizing Accelerate function

■ Ultra low power consumption (typical values)

— 2 mA active read current at 1 MHz

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

Publication# 21533 Rev: D Amendment/0

Issue Date: February 22, 2000

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29DL163DT70RZD相关器件

型号	品牌	获取价格	描述	数据表
AM29DL163DT70VRF	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT70VRF	SPANSION	获取价格	Flash, 1MX16, 70ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, LEAD FREE, VBGA-48
AM29DL163DT70VRI	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT70VRI	SPANSION	获取价格	Flash, 1MX16, 70ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, VBGA-48
AM29DL163DT70WCF	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT70WCF	SPANSION	获取价格	Flash, 1MX16, 70ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29DL163DT70WCI	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL163DT70WCI	SPANSION	获取价格	Flash, 1MX16, 70ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48
AM29DL163DT70WCIN	ETC	获取价格	x8/x16 Flash EEPROM
AM29DL163DT90	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem

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