Datasheet > AM28F512-120EC

AM28F512-120EC

更新时间： 2024-11-08 22:24:39

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	460K
描述
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM28F512-120EC 数据手册

FINAL

Am28F512

512 Kilobit (64 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■

High performance

Latch-up protected to 100 mA

from -1 V to V_CC+1 V

— 70 ns maximum access time

CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

Flasherase Electrical Bulk Chip-Erase

— One second typical chip-erase

Flashrite Programming

■

— 10 µs typical byte-program

— One second typical chip program

■

Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

Command register architecture for

microprocessor/microcontroller compatible

write interface

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■

On-chip address and data latches

Advanced CMOS flash memory technology

— Low cost single transistor memory cell

Automatic write/erase pulse stop timer

■

10,000 write/erase cycles minimum

Write and erase voltage 12.0 V 5%

■

GENERAL DESCRIPTION

The Am28F512 is a 512 K bit Flash memory orga-

nized as 64 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

Am28F512 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed

and erased in-system or in standard EPROM pro-

grammers. The Am28F512 is erased when shipped

from the factory.

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F512 uses a

12.0V± 5% V_PPhigh voltage input to perform the

Flasherase and Flashrite algorithms.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on ad-

dress and data pins from -1 V to V_CC+1 V.

The standard Am28F512 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F512 has separate chip enable (CE#) and

output enable (OE#) controls.

The Am28F512 is byte programmable using 10 ms pro-

gramming pulses in accordance with AMD’s Flashrite

programming algorithm. The typical room temperature

programming time of the Am28F512 is one second.

The entire chip is bulk erased using 10 ms erase pulses

according to AMD’s Flasherase algorithm. Typical era-

sure at room temperature is accomplished in less than

one second. The windowed package and the 15-20

minutes required for EPROM erasure using ultra-violet

light are eliminated.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F512 uses a command register to manage this

functionality, while maintaining a standard JEDEC

Flash Standard 32-pin pinout. The command register

allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming.

Commands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as inputs to an internal state-machine which

controls the erase and programming circuitry. During

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

Publication# 11561 Rev: G Amendment/+2

Issue Date: January 1998

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM28F512-120EC相关器件

型号	品牌	获取价格	描述	数据表
AM28F512-120ECB	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120EE	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120EEB	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120EI	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120EIB	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120FC	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120FCB	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120FE	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120FEB	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F512-120FI	AMD	获取价格	512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

与AM28F512-120EC相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F512-120EC

AM28F512-120EC 数据手册

与AM28F512-120EC相关器件

与AM28F512-120EC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F512-120EC

AM28F512-120EC 数据手册

与AM28F512-120EC相关器件

与AM28F512-120EC相关文章

您还可以找

您在本页遇到什么问题？