Datasheet > AM28F020-90JE

AM28F020-90JE

更新时间： 2024-11-04 23:00:27

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	483K
描述
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AM28F020-90JE 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFJ	包装说明：	QCCJ, LDCC32,.5X.6
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.51
风险等级：	5.39	最长访问时间：	90 ns
命令用户界面：	YES	数据轮询：	NO
耐久性：	10000 Write/Erase Cycles	JESD-30 代码：	R-PQCC-J32
JESD-609代码：	e0	内存密度：	2097152 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	262144 words	字数代码：	256000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	256KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	QCCJ	封装等效代码：	LDCC32,.5X.6
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	最大待机电流：	0.0001 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	J BEND
端子节距：	1.27 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	NO
类型：	NOR TYPE	Base Number Matches：	1

AM28F020-90JE 数据手册

FINAL

Am28F020

2 Megabit (256 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

■

Latch-up protected to 100 mA from

–1 V to V_CC+1 V

DISTINCTIVE CHARACTERISTICS

■

High performance

■

Flasherase Electrical Bulk Chip Erase

— One second typical chip erase time

Flashrite Programming

— Access times as fast as 70 ns

CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

■

— 10 µs typical byte program time

— 4 s typical chip program time

■

Command register architecture for

microprocessor/microcontroller compatible

write interface

■

Compatible with JEDEC-standard byte-wide

32-pin EPROM pinouts

— 32-pin PDIP

■

On-chip address and data latches

— 32-pin PLCC

Advanced CMOS flash memory technology

— Low cost single transistor memory cell

Automatic write/erase pulse stop timer

— 32-pin TSOP

■

10,000 write/erase cycles minimum

■

Write and erase voltage 12.0 V 5%

GENERAL DESCRIPTION

The Am28F020 is a 2 Megabit Flash memory orga-

nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

Am28F020 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed and

erased in-system or in standard EPROM programmers.

The Am28F020 is erased when shipped from

the factory.

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F020 uses a

12.0±5% V_PPsupply input to perform the Flasherase

and Flashrite functions.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on

address and data pins from –1 V to V_CC+1 V.

The standard Am28F020 offers access times of as fast

as 70 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion, the device has separate chip enable (CE#) and

output enable (OE#) controls.

The Am28F020 is byte programmable using 10 µs

programming pulses in accordance with AMD’s

Flashrite programming algorithm. The typical room

temperature programming time of the Am28F020 is

four seconds. The entire chip is bulk erased using 10

ms erase pulses according to AMD’s Flasherase

algorithm. Typical erasure at room temperature is

accomplished in less than one second. The windowed

package and the 15–20 minutes required for EPROM

erasure using ultraviolet light are eliminated.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F020 uses a command register to manage this

functionality, while maintaining a JEDEC-standard 32-

pin pinout. The command register allows for 100% TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

Commands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state-machine, which

controls the erase and programming circuitry. During

write cycles, the command register internally latches

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

Publication# 14727 Rev: F Amendment/+2

Issue Date: January 1998

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM28F020-90JE相关器件

型号	品牌	获取价格	描述	数据表
AM28F020-90JEB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90JI	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90JIB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90LC	ETC	获取价格	x8 Flash EEPROM
AM28F020-90PC	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90PCB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90PE	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90PE	ROCHESTER	获取价格	Flash, 256KX8, 90ns, PDIP32, PLASTIC, DIP-32
AM28F020-90PEB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-90PI	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

与AM28F020-90JE相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F020-90JE

AM28F020-90JE 技术参数

AM28F020-90JE 数据手册

与AM28F020-90JE相关器件

与AM28F020-90JE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F020-90JE

AM28F020-90JE 技术参数

AM28F020-90JE 数据手册

与AM28F020-90JE相关器件

与AM28F020-90JE相关文章

您还可以找

您在本页遇到什么问题？