Datasheet > AM28F010A-120FEB

AM28F010A-120FEB

更新时间： 2024-11-07 23:00:27

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	439K
描述
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

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AM28F010A-120FEB 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSOP1-R, TSSOP32,.8,20
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.51
风险等级：	5.76	最长访问时间：	120 ns
其他特性：	100K WRITE/ERASE CYCLES MIN	命令用户界面：	YES
数据轮询：	YES	JESD-30 代码：	R-PDSO-G32
JESD-609代码：	e0	长度：	18.4 mm
内存密度：	1048576 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	128KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1-R
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	反向引出线：	YES
座面最大高度：	1.2 mm	最大待机电流：	0.0001 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
宽度：	8 mm	Base Number Matches：	1

AM28F010A-120FEB 数据手册

FINAL

Am28F010A

1 Megabit (128 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

■ Latch-up protected to 100 mA from

DISTINCTIVE CHARACTERISTICS

–1 V to V_CC+1 V

■ High performance

■ Embedded Erase Electrical Bulk Chip Erase

— Access times as fast as 70 ns

■ CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

— 5 seconds typical chip erase, including

pre-programming

■ Embedded Program

— 14 µs typical byte program, including time-out

— 4 seconds typical chip program

■ Compatible with JEDEC-standard byte-wide

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

32-pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

■ On-chip address and data latches

— 32-pin TSOP

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ 100,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5%

■ Embedded algorithms for completely self-timed

write/erase operations

within this family that offer Embedded Algorithms use

the same command set. This offers designers the flexi-

bility to retain the same device footprint and command

set, at any density between 256 Kbits and 2 Mbits.

GENERAL DESCRIPTION

The Am28F010A is a 1 Megabit Flash memory orga-

nized as 128 Kbytes of 8 bits each. AMD’s Flash memo-

ries offer the most cost-effective and reliable read/write

non-volatile random access memory. The Am28F010A

is packaged in 32-pin PDIP, PLCC, and TSOP versions.

It is designed to be reprogrammed and erased in-system

or in standard EPROM programmers. The Am28F010A

is erased when shipped from the factory.

AMD’s Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles. The

AMD cell is designed to optimize the erase and program-

ming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal elec-

tric fields for erase and programming operations pro-

duces reliable cycling. The Am28F010A uses a

12.0±5% V_PPinput to perform the erase and program-

ming functions.

The standard Am28F010A offers access times of as fast

as 70 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus contention,

the device has separate chip enable (CE#) and output

enable (OE#) controls.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on address

and data pins from –1 V to V_CC+1 V.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010A uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

AMD’s Flash technology combines years of EPROM and

EEPROM experience to produce the highest levels of

quality, reliability, and cost effectiveness. The

Am28F010A electrically erases all bits simultaneously

using Fowler-Nordheim tunneling. The bytes are

programmed one byte at a time using the EPROM pro-

gramming mechanism of hot electron injection.

The Am28F010A is compatible with the AMD

Am28F256A, Am28F512A, and Am28F020A Flash

memories. All devices in the Am28Fxxx family follow the

JEDEC 32-pin pinout standard. In addition, all devices

Publication# 16778 Rev: D Amendment/+2

Issue Date: May 1998

12 3 4 5 6 7...35

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与AM28F010A-120FEB相关器件

型号	品牌	获取价格	描述	数据表
AM28F010A-120FI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120FIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120JIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-120LC	ETC	获取价格	x8 Flash EEPROM
AM28F010A-120LE	ETC	获取价格	x8 Flash EEPROM

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