FINAL
Am27C040
4 Megabit (524,288 x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
■ Fast access time
■ ±10% power supply tolerance standard on
most speeds
— 90 ns
■ 100% Flashrite™ programming
— Typical programming time of 1 minute
■ Latch-up protected to 100 mA from –1 V to
■ Low power consumption
— 100 µA maximum CMOS standby current
JEDEC-approved pinout
V
+ 1 V
CC
— Plug in upgrade of 1 Mbit EPROM and 2 Mbit
EPROMs
■ High noise immunity
■ Compact 32-pin DIP, PDIP, PLCC,TSOP
— Easy upgrade from 28-pin JEDEC EPROMs
packages
■ Single +5 V power supply
GENERAL DESCRIPTION
The Am27C040 is a 4 Mbit ultraviolet erasable pro-
grammable read-only memory. It is organized as 512K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one-time programmable (OTP) packages.
(CE) controls, thus eliminating bus contention in a mul-
tiple bus microprocessor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 100 mW in active mode,
and 100µW in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The Am27C040 supports AMD’s
Flashrite programming algorithm (100 µs pulses) re-
sulting in typical programming time of 1 minute.
Typically, any byte can be accessed in less than 90 ns,
allowing operation with high-performance micropro-
cessors without any WAIT states. The Am27C040 of-
fers separate Output Enable (OE) and Chip Enable
BLOCK DIAGRAM
V
Data Outputs
DQ0–DQ7
CC
V
V
SS
PP
Output Enable
Chip Enable
and
OE
Output
Buffers
Prog Logic
CE/PGM
Y
Y
Gating
Decoder
A0–A18
Address
Inputs
X
4,194,304-Bit
Cell Matrix
Decoder
14971E-1
Publication# 14971 Rev: E Amendment/+1
Issue Date: July 1997