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AL1I-67204V-55 PDF预览

AL1I-67204V-55

更新时间: 2024-01-12 16:31:51
品牌 Logo 应用领域
TEMIC 先进先出芯片
页数 文件大小 规格书
16页 145K
描述
FIFO, 4KX9, 55ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28

AL1I-67204V-55 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
最长访问时间:55 ns周期时间:70 ns
JESD-30 代码:R-GDIP-T28长度:37.25 mm
内存密度:36864 bit内存宽度:9
功能数量:1端子数量:28
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:4KX9
可输出:NO封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:5.72 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:15.24 mm
Base Number Matches:1

AL1I-67204V-55 数据手册

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MATRA MHS  
L 67203/L 67204  
Pin Names  
NAMES  
I0–8  
Q0–8  
W
DESCRIPTION  
NAMES  
DESCRIPTION  
Inputs  
FF  
XO/HF  
XI  
Full Flag  
Outputs  
Expansion Out/Half–Full Flag  
Expansion IN  
Write Enable  
Read Enable  
Reset  
R
FL/RT  
VCC  
GND  
First Load/Retransmit  
Power Supply  
RS  
EF  
Empty Flag  
Ground  
Signal Description  
pointers to the first location. A reset is required after  
power-up before a write operation can be enabled. Both  
the Read Enable (R) and Write Enable (W) inputs must be  
in the high state during the period shown in figure 1 (i.e.  
Data In (I0 - I8)  
Data inputs for 9 - bit data  
t
before the rising edge of RS) and should not change  
RSS  
Reset (RS)  
until t  
after the rising edge of RS. The Half-Full Flag  
RSR  
(HF) will be reset to high after Reset (RS).  
Reset occurs whenever the Reset (RS) input is taken to a  
low state. Reset returns both internal read and write  
Figure 1. Reset.  
Notes : 1. EF, FF and HF may change status during reset, but flags will be valid at t  
.
RSC  
2. W and R = V around the rising edge of RS.  
IH  
will be set to low and remain in this state until the  
difference between the write and read pointers is less than  
or equal to half the total available memory in the device.  
The Half-Full Flag (HF) is then reset by the rising edge  
of the read operation.  
Write Enable (W)  
A write cycle is initiated on the falling edge of this input  
if the Full Flag (FF) is not set. Data set-up and hold times  
must be maintained in the rise time of the leading edge of  
the Write Enable (W). Data is stored sequentially in the  
Ram array, regardless of any current read operation.  
To prevent data overflow, the Full Flag (FF) will go low,  
inhibiting further write operations. On completion of a  
valid read operation, the Full Flag (FF) will go high after  
TRFF, allowing a valid write to begin. When the FIFO  
Once half the memory is filled, and during the falling  
edge of the next write operation, the Half-Full Flag (HF)  
Rev. C (10/11/94)  
3

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