Datasheet > AGR19030EF

AGR19030EF

更新时间： 2024-01-17 21:04:00

品牌	Logo	应用领域
TRIQUINT		晶体晶体管过程控制系统 PCS 放大器局域网
页数	文件大小	规格书
10页	329K
描述
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AGR19030EF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.39
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	87.5 W
子类别：	FET General Purpose Power	Base Number Matches：	1

AGR19030EF 数据手册

AGR19030EF

30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

Electrical Characteristics (continued)

Recommended operating conditions apply unless otherwise specified: TC = 30 °C.

Table 4. RF Characteristics

Parameter

Dynamic Characteristics

Symbol Min Typ Max Unit

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

(This part is internally matched on both the input and output.)

(in Supplied Test Fixture)

CRSS

—

0.8

—

Functional Tests (in Agere Systems Supplied Test Fixture)

Common-source Amplifier Power Gain

(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,

f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz)

GPS

15.5

—

Drain Efficiency

24.8

–34.5

(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,

f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz)

Third-order Intermodulation Distortion

IM3

—

dBc

(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,

f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz;

IM3 measured in a 1.2288 integration BW centered at f1 – 2.5 MHz and

f2 + 2.5 MHz, referenced to the carrier channel power)

Adjacent Channel Power Ratio

ACPR

—

–49.0

—

dBc

(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,

f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz;

IM3 measured in a 1.2288 integration BW centered at f1 – 2.5 MHz and

f2 + 2.5 MHz, referenced to the carrier channel power)

Output Power at 1 dB Gain Compression

(VDD = 28 V, POUT = 30 W CW, f = 1990 MHz, IDQ = 350 mA)

Input Return Loss

P1dB

IRL

—

–12

(VDD = 28 Vdc, POUT = 6 W Avg., 2-carrier N-CDMA, IDQ = 350 mA,

f1 = 1930 MHz, f2 = 1932.5 MHz, and f1 = 1987.5 MHz, f2 = 1990 MHz)

Ruggedness

No degradation in output

power.

(VDD = 28 V, POUT = 30 W CW, IDQ = 350 mA, f = 1930 MHz, VSWR =

10:1 [all phase angles])

1 234 5 6 7...10

中文翻译

下载PDF

与AGR19030EF相关器件

型号	品牌	描述	获取价格	数据表
AGR19045EF	TRIQUINT	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19060E	TRIQUINT	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19060EF	TRIQUINT	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19060EU	TRIQUINT	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19090E	TRIQUINT	90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19090EF	TRIQUINT	90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格